| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Syväjärvi, Mikael
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2023Novel Photonic Applications of Silicon Carbidecitations
- 2022The progress and roadmap of metal–organic frameworks for high-performance supercapacitorscitations
- 2020Epitaxial Graphene Growth on the Step-Structured Surface of Off-Axis C-Face 3C-SiC(1¯1¯1¯)citations
- 2020Epitaxial Graphene Growth on the Step-Structured Surface of Off-Axis C-Face 3C-SiC(1 over bar 1 over bar 1 over bar )citations
- 2018Boron-doping of cubic SiC for intermediate band solar cells: a scanning transmission electron microscopy studycitations
- 2017Low Temperature Photoluminescence of 6H fluorescent SiC
- 2016Surface engineering of SiC via sublimation etchingcitations
- 2016Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2citations
- 2016Surface passivation of nano-textured fluorescent SiC by atomic layer deposited TiO2citations
- 2015A new type of white light-emitting diode light source basing on fluorescent SiC
- 2015A new type of white light-emitting diode light source basing on fluorescent SiC
- 2012Shockley-Frank stacking faults in 6H-SiCcitations
Places of action
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document
A new type of white light-emitting diode light source basing on fluorescent SiC
Abstract
Most of the commercial white light-emitting diode (LED) light sources are made from phosphor coated blue-emitting gallium nitride (GaN) chips. This type white LED light source always has tradeoff between luminous efficacy and color rendering index (CRI). Furthermore, yellow-emitting phosphor decays much faster than the semiconductor chip, so the white color will turn into bluish over the time. This paper will propose a new type white LED light source: using fluorescent silicon carbide (SiC) to take the place of phosphor. This new type LED has the following advantages: a) SiC is a wide bandgap semiconductor material , so it is stable; b) Fluorescent SiC has very wide emission spectrum, and it could generate white light with very high CRI; c) It is a better substrate than sapphire for the GaN growth in terms of lattice match and thermal conductivity. This paper will cover: the growth of fluorescent SiC, its optical characterization, nanostructuring of the SiC surface for extraction efficiency enhancement, and surface passivation for further efficiency enhancement.