| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Napari, Mari
King's College London
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (15/15 displayed)
- 2024Forming-free and non-linear resistive switching in bilayer HfOx/TaOx memory devices by interface-induced internal resistancecitations
- 2024Spatially selective crystallization of ferroelectric Hf0.5Zr0.5O2 films induced by sub-nanosecond laser annealingcitations
- 2024Forming-free and non-linear resistive switching in bilayer HfO x /TaO x memory devices by interface-induced internal resistancecitations
- 2021Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications
- 2021Atomic scale surface modification of TiO2 3D nano-arrays : plasma enhanced atomic layer deposition of NiO for photocatalysiscitations
- 2020Ti Alloyed α-Ga2O3 : route towards Wide Band Gap Engineeringcitations
- 2020Role of ALD Al2O3 surface passivation on the performance of p-type Cu2O thin film transistors
- 2020Ti alloyed $α$-Ga$_2$O$_3$: route towards wide band gap engineering
- 2020Bandgap Lowering in Mixed Alloys of Cs2Ag(SbxBi1-x)Br6 Double Perovskite Thin Films
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineeringcitations
- 2020Ti Alloyed α-Ga2O3: Route towards Wide Band Gap Engineering.
- 2020Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin filmscitations
- 2020Bandgap lowering in mixed alloys of Cs2Ag(SbxBi1−x)Br6 double perovskite thin filmscitations
- 2020Ti Alloyed α -Ga 2 O 3: Route towards Wide Band Gap Engineering
- 2017Room-temperature plasma-enhanced atomic layer deposition of ZnO : Film growth dependence on the PEALD reactor configurationcitations
Places of action
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document
Ti alloyed $α$-Ga$_2$O$_3$: route towards wide band gap engineering
Abstract
The suitability of Ti as a band gap modifier for -Ga$_2$O$_3$ was investigated, taking advantage of the isostructural -phases and high band gap difference between Ti$_2$O$_3$ and Ga$_2$O$_3$. Films of Ti:Ga$_2$O$_3$, with a range of Ti concentrations, synthesized by atomic layer deposition on sapphire substrates, were characterized to determine how crystallinity and band gap vary with composition for this alloy. The deposition of crystalline -(Ti$_x$Ga$_{1-x}$)$_2$O$_3$ films with up to x~5.3%, was demonstrated. At greater Ti concentration, the films became amorphous. Modification of the band gap over a range of ~ 270 meV was achieved across the crystalline films and a maximum change in band gap from pure -Ga$_2$O$_3$ of ~1.1 eV was observed for the films of greatest Ti fraction (61% Ti relative to Ga). The ability to maintain a crystalline phase at low fractions of Ti, accompanied by a significant modification in band gap shows promise for band gap engineering and the enhancement in versatility of application of -Ga$_2$O$_ 3$ in optoelectronic devices.