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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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May, Pw
University of Bristol
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2022Experimental studies of electron affinity and work function from titanium on oxidised diamond (100) surfacescitations
- 2019Ab initio study of negative electron affinity from light metals on the oxygen-terminated diamond (1 1 1) surfacecitations
- 2017Bosonic Confinement and Coherence in Disordered Nanodiamond Arrayscitations
- 2016Fast electron transfer kinetics on novel interconnected nanospheres of graphene layers electrodescitations
- 2015Photochemically modified diamond-like carbon surfaces for neural interfacescitations
- 2015High surface area diamond-like carbon electrodes grown on vertically aligned carbon nanotubescitations
- 2013Metal-Bosonic Insulator-Superconductor Transition in Boron-Doped Granular Diamondcitations
- 2010Simulations of CVD diamond film growth using a simplified Monte Carlo model
- 2008Raman and conductivity studies of boron-doped microcrystalline diamond, facetted nanocrystalline diamond and cauliflower diamond filmscitations
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document
Simulations of CVD diamond film growth using a simplified Monte Carlo model
Abstract
A simple 1-dimensional kinetic Monte Carlo (KMC) model has been developed to simulate the chemical vapour deposition (CVD) of a diamond (100) surface. The model considers adsorption, etching/desorption, lattice incorporation, and surface migration along and across the dimer rows. The reaction probabilities for these processes are re-evaluated in detail and their effects upon the predicted growth rates and morphology are described. We find that for standard CVD diamond conditions, etching of carbon species from the growing surface is negligible. Surface migration occurs rapidly, but is mostly limited to CH 2 species oscillating rapidly back and forth between two adjacent radical sites. Despite the average number of migration hops being in the thousands, the average surface diffusion length for a surface species before it either adds to the diamond lattice or is removed back to the gas phase is <2 sites.