| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Niranjan, Manish K.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2019Surface electronic structure, relaxations and thermodynamic energies of (100), (110) and (111) surfaces of Mg2Si: A first-principles theoretical study
- 2019Ferroelectric superlattices at nano scale: A Theoretical Investigation
- 2018Optimum discharge energy density at room temperature in relaxor K 1/2 Bi 1/2 TiO 3 for green energy harvesting
- 2017Phase stability and elastic properties of β Ti-Nb-X (X=Zr, Sn) alloys: An ab-initio density functional studycitations
- 2016Synthesis And Characterization of ferroelectric material (Na0.5Bi0.5)TiO3- Eu2O3
- 2015Microstructural studies of AgNbO3 ceramic by using complex impedance spectroscopy
- 2015Theoretical Investigation of Crystal and Electronic Structure of piezoelectric AgNb0.5Ta0.5O3
- 2012First principles study of structural, electronic and elastic properties of cubic and orthorhombic RhSi
- 2011Metallic and Insulating Oxide Interfaces Controlled by Electronic Correlations
- 2010Suppression of Octahedral Tilts and Associated Changes in Electronic Properties at Epitaxial Oxide Heterostructure Interfaces
Places of action
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document
Metallic and Insulating Oxide Interfaces Controlled by Electronic Correlations
Abstract
The formation of two-dimensional electron gases (2DEGs) at complex oxide interfaces is directly influenced by the oxide electronic properties. We investigated how local electron correlations control the 2DEG by inserting a single atomic layer of a rare-earth oxide (RO) [(R is lanthanum (La), praseodymium (Pr), neodymium (Nd), samarium (Sm), or yttrium (Y)] into an epitaxial strontium titanate oxide (SrTiO3) matrix using pulsed-laser deposition with atomic layer control. We find that structures with La, Pr, and Nd ions result in conducting 2DEGs at the inserted layer, whereas the structures with Sm or Y ions are insulating. Our local spectroscopic and theoretical results indicate that the interfacial conductivity is dependent on electronic correlations that decay spatially into the SrTiO3 matrix. Such correlation effects can lead to new functionalities in designed heterostructures.