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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Mourgelas, Vasileios
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document
Mid-IR thermo-optic on-chip spectrometer on a III-V semiconductor platform
Abstract
GaAs on InGaP is a very promising waveguide platform for the Mid-IR wavelength region due to its wideband transmission and low optical loss. We exploit this platform for the demonstration of a Mid-IR thermo-optic spectrometer. The device modelling results showed a temperature response time of a few seconds for a maximum power consumption of about 26 mW, for the required heater temperature rise needed to achieve a spectral resolution of 10 cm<sup>-1</sup>.