Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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Materials Map under construction

The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (2/2 displayed)

  • 2017Transport studies of epi-Al/InAs 2DEG systems for required building-blocks in topological superconductor networks55citations
  • 2014Tuning spin orbit interaction in high quality gate-defined InAs one-dimensional channelscitations

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Marcus, Charles M.
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Lee, Joon Sue
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Mcfadden, Anthony P.
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Kjaergaard, Morten
1 / 1 shared
Suominen, Henri J.
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Nichele, Fabrizio
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Shojaei, Borzoyeh
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Pendharkar, Mihir
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Palmstrøm, Chris J.
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Mcfadden, Anthony
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Shabani, J.
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Nayak, C.
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Lutchyn, R. M.
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Palmstrøm, C. J.
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2017
2014

Co-Authors (by relevance)

  • Marcus, Charles M.
  • Lee, Joon Sue
  • Mcfadden, Anthony P.
  • Kjaergaard, Morten
  • Suominen, Henri J.
  • Nichele, Fabrizio
  • Shojaei, Borzoyeh
  • Pendharkar, Mihir
  • Palmstrøm, Chris J.
  • Mcfadden, Anthony
  • Shabani, J.
  • Nayak, C.
  • Lutchyn, R. M.
  • Palmstrøm, C. J.
OrganizationsLocationPeople

document

Tuning spin orbit interaction in high quality gate-defined InAs one-dimensional channels

  • Mcfadden, Anthony
  • Shabani, J.
  • Nayak, C.
  • Lutchyn, R. M.
  • Kim, Younghyun
  • Palmstrøm, C. J.
Abstract

Spin-orbit coupling in solids describes an interaction between an electron's spin, an internal quantum-mechanical degree of freedom, with its linear momentum, an external property. Spin-orbit interaction, due to its relativistic nature, is typically small in solids, and is often taken into account perturbatively. It has been recently realized, however, that materials with strong spin-orbit coupling can lead to novel states of matter such as topological insulators and superconductors. This exciting development might lead to a number of useful applications ranging from spintronics to quantum computing. In particular, theory predicts that narrow band gap semiconductors with strong spin-obit coupling are a suitable platform for the realization of Majorana zero-energy modes, predicted to obey exotic non-Abelian braiding statistics. The pursuit for realizing Majorana modes in condensed matter systems and investigating their exotic properties has been a subject of intensive experimental research recently. Here, we demonstrate the first realization of gate-defined wires where one-dimensional confinement is created using electrostatic potentials, on large area InAs two dimensional electron systems (2DESs). The electronic properties of the parent 2DES are fully characterized in the region that wires are formed. The strength of the spin-orbit interaction has been measured and tuned while the high mobility of the 2DES is maintained in the wire. We show that this scheme could provide new prospective solutions for scalable and complex wire networks.

Topics
  • impedance spectroscopy
  • mobility
  • theory
  • semiconductor
  • strength
  • wire
  • one-dimensional