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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Taha, H.
in Cooperation with on an Cooperation-Score of 37%
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Publications (6/6 displayed)
- 2020Sol-gel derived ITO-based bi-layer and tri-layer thin film coatings for organic solar cells applicationscitations
- 2018Understanding the impacts of Al +3 -substitutions on the enhancement of magnetic, dielectric and electrical behaviors of ceramic processed nickel-zinc mixed ferrites: FTIR assisted studiescitations
- 2018Structural, morphological, and optical characterizations of Mo, CrN and Mo:CrN sputtered coatings for potential solar selective applicationscitations
- 2017Improving the optoelectronic properties of titanium-doped indium tin oxide thin filmscitations
- 2017Probing the effects of thermal treatment on the electronic structure and mechanical properties of Ti-doped ITO thin filmscitations
- 2016Optoelectronic properties of spin coated titanium doped indium tin oxide thin films
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document
Optoelectronic properties of spin coated titanium doped indium tin oxide thin films
Abstract
Among various transparent conductive materials, indium tin oxide (ITO) demonstrates a major dominant role due to its high optical transparency and high electrical conductivity. Doping ITO with a transition metal, such as Ti, Mo, Zr, Cu, can improve the optoelectronic properties of such coatings. In this study, titanium- doped ITO (Ti:ITO) thin film coatings were developed via a low cost and simple sol-gel spin coating technique. The effect of Ti concentration and annealing temperature on the structural, morphological, optical and electrical properties of the synthesized films (350nm thickness) were characterised by FESME, XRD and UV-Vis techniques. XRD analysis confirmed the cubic bixbyite structure of polycrystalline indium oxide phase. The crystallinity, optical transparency and electric conductivity of the thin film coatings were improved with increase of annealing temperature. At 500°C annealing temperature the grain sizes, verified by FESEM, of the thin films were 79 and 65 nm for doping concentration of 4 at% and 2 at% Ti, respectively. Furthermore, at this temperature, optimum electrical resistivity (1.6x 10-4 n.cm) and optical transmittance (92%) were achieved. These results compare favourably with the resistivity (2.9x 1 o-4 n.cm) and transparency around (90%) founded by Liu et.al and Paeng et. al respectively [1, 2].