• Bishop, Sm
• Hallin, C.
• Henry, A.
• Sarney, W.
• Chang, Hr
• Storasta, L.
• Reitmeier, Zj
• Jacobson, H.
• Wagner, Bp
• Janzen, E.
• Davis, Rf

Abstract

<p>Homoepitaxial films of 4H-SiC(11 (2) over bar0) and 8degrees off-axis 4H-SiC(0001) have been grown and characterized. The number of domains and the range of full-width half-maxima values of the x-ray rocking curves of the [11 (2) over bar0]-oriented wafers were smaller than the analogous values acquired from the (0001) materials. Hydrogen etching of the former surface for 5 and 30 minutes reduced the RMS roughness from 0.52 nm to 0.48 nm and to 0.28 nm, respectively; the RMS roughness for a 30 mum (11 (2) over bar0) film was 0.52 nm. Micropipes in the substrates did not thread beyond the film-substrate interface. The separation distance between stacking faults was determined to be 10 pm by transmission electron microscopy. Hall mobilities and carrier concentrations of 12,200 cm 2 /Vs and 3.1x10(14) cm(-3) and 800 cm(2)/Vs and 7.4 x 10(14) cm(-3) were measured at 100degreesK and 300degreesK, respectively. Photoluminescence indicated high purity. 4H-SiC(l 120) PiN devices exhibited average blocking voltages to 1344 V and a minimum average forward voltage drop of 3.94 V.</p>

Topics

• surface
• photoluminescence
• Hydrogen
• transmission electron microscopy
• etching
• stacking fault