| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Forbes, Ian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2021Diamond-doped silica aerogel for solar geoengineeringcitations
- 2013Study of the Al-grading effect in the crystallisation of chalcopyrite Cu(In,Al)Se2 thin films selenised at different temperaturescitations
- 2013Crystallographic properties and elemental migration in two-stage prepared CuIn1−xAlxSe2 thin films for photovoltaic applicationscitations
- 2011Electrical, morphological and structural properties of RF magnetron sputtered Mo thin films for application in thin film photovoltaic solar cellscitations
- 2010CuInSe2 precursor films electro-deposited directly onto MoSe2citations
- 2010Optical properties of thin films of Cu2ZnSnSe4 fabricated by sequential deposition and selenisation
- 2010Control of grain size in sublimation-grown CdTe, and the improvement in performance of devices with systematically increased grain sizecitations
- 2010A feasibility study towards ultra-thin PV solar cell devices by MOCDV based on a p-i-n structure incorporating pyrite
- 2008New routes to sustainable photovoltaics: evaluation of Cu2ZnSnS4 as an alternative absorber materialcitations
Places of action
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conferencepaper
Optical properties of thin films of Cu2ZnSnSe4 fabricated by sequential deposition and selenisation
Abstract
The search for new, low-cost semiconductor materials for large-scale production of solar cells has recently resulted in increased interest in the direct band gap quaternary semiconductor compound Cu2ZnSn(S,Se)4. A particular advantage compared to thin-film cells based on CuInGa(S,Se)2 (CIGS) is the absence of indium in the absorber layer. The constituent elements of Cu2ZnSn(S,Se)4 are all abundant in the earth’s crust, the material can be p-type doped and its absorption coefficient exceeds 104 cm–1 [1] in the visible range. An overview of progress on Cu2ZnSn(S,Se)4 thin film solar cell development has recently been published [2]. The conversion efficiency of Cu2ZnSnSe4 (CZTSe) based solar cells is around 4% [3] while that for Cu2ZnSnS4 (CZTS) based solar cells is close to 7% [4]. Recently, Todorov et al. [5] reported a record efficiency of 9.6% for a Cu2ZnSn(Se,S)4 based device. Photoluminescence (PL) is a very effective tool to study the electronic properties of semiconductors. PL spectra are highly sensitive to changes in the elemental composition of compound semiconductors which determines the type and concentrations of defects. Very few PL studies on CZTSe have been reported so far and the band gap in this material still has not been reliably established. Grossberg et al. [6] estimated a band gap value of 1.02 eV at 10 K which is in good agreement with the theoretical predictions of ~1.0 eV reported by Chen et al. [7]. However, an earlier report by Matsushita et al. [8] indicated a quite different value of 1.44 eV using optical absorption measurements at room temperature. In this paper we study the crystalline structure, the morphology, the elemental composition and the defect nature of CZTSe thin films using X-Ray diffraction (XRD), scanning electron microscopy (SEM), wavelength dispersive x-ray spectroscopy (WDX) and PL analysis, respectively.