| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Beattie, Neil
Northumbria University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (18/18 displayed)
- 2023A structural, optical and electrical comparison between physical vapour deposition and slot-die deposition of Al:ZnO (AZO)
- 2022Elimination of the carbon-rich layer in Cu2ZnSn(S, Se)4 absorbers prepared from nanoparticle inkscitations
- 2022Routes to Increase Performance for Antimony Selenide Solar Cells using Inorganic Hole Transport Layerscitations
- 2022Ex-situ Ge-doping of CZTS Nanocrystals and CZTSSe Solar Absorber Filmscitations
- 2022Exploring the Role of Temperature and Hole Transport Layer on the Ribbon Orientation and Efficiency of Sb2Se3 cells Deposited via Thermal Evaporation
- 2022Recovery mechanisms in aged kesterite solar cellscitations
- 2020Innovative fabrication of low-cost kesterite solar cells for distributed energy applications
- 2019Solution processing route to Na incorporation in CZTSSe nanoparticle ink solar cells on foil substratecitations
- 2018Temperature controlled properties of sub-micron thin SnS filmscitations
- 2018Temperature controlled properties of sub-micron thin SnS filmscitations
- 2018CZTSSe Solar Cells from Nanoparticle Inks
- 2017A combined Na and Cl treatment to promote grain growth in MOCVD grown CdTe thin filmscitations
- 2016Selenization kinetics inCu2ZnSn(S,Se)4 solar cells prepared from nanoparticle inkscitations
- 2016Sodium Induced Microstructural Changes in MOCVD-Grown CdTe Thin Films
- 2016The role of nanoparticle inks in determining the performance of solution processed Cu2ZnSn(S,Se)4thin film solar cellscitations
- 2013Crystallographic properties and elemental migration in two-stage prepared CuIn1−xAlxSe2 thin films for photovoltaic applicationscitations
- 2011Electrical, morphological and structural properties of RF magnetron sputtered Mo thin films for application in thin film photovoltaic solar cellscitations
- 2010Optical properties of thin films of Cu2ZnSnSe4 fabricated by sequential deposition and selenisation
Places of action
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conferencepaper
Optical properties of thin films of Cu2ZnSnSe4 fabricated by sequential deposition and selenisation
Abstract
The search for new, low-cost semiconductor materials for large-scale production of solar cells has recently resulted in increased interest in the direct band gap quaternary semiconductor compound Cu2ZnSn(S,Se)4. A particular advantage compared to thin-film cells based on CuInGa(S,Se)2 (CIGS) is the absence of indium in the absorber layer. The constituent elements of Cu2ZnSn(S,Se)4 are all abundant in the earth’s crust, the material can be p-type doped and its absorption coefficient exceeds 104 cm–1 [1] in the visible range. An overview of progress on Cu2ZnSn(S,Se)4 thin film solar cell development has recently been published [2]. The conversion efficiency of Cu2ZnSnSe4 (CZTSe) based solar cells is around 4% [3] while that for Cu2ZnSnS4 (CZTS) based solar cells is close to 7% [4]. Recently, Todorov et al. [5] reported a record efficiency of 9.6% for a Cu2ZnSn(Se,S)4 based device. Photoluminescence (PL) is a very effective tool to study the electronic properties of semiconductors. PL spectra are highly sensitive to changes in the elemental composition of compound semiconductors which determines the type and concentrations of defects. Very few PL studies on CZTSe have been reported so far and the band gap in this material still has not been reliably established. Grossberg et al. [6] estimated a band gap value of 1.02 eV at 10 K which is in good agreement with the theoretical predictions of ~1.0 eV reported by Chen et al. [7]. However, an earlier report by Matsushita et al. [8] indicated a quite different value of 1.44 eV using optical absorption measurements at room temperature. In this paper we study the crystalline structure, the morphology, the elemental composition and the defect nature of CZTSe thin films using X-Ray diffraction (XRD), scanning electron microscopy (SEM), wavelength dispersive x-ray spectroscopy (WDX) and PL analysis, respectively.