| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Forbes, Ian
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2021Diamond-doped silica aerogel for solar geoengineeringcitations
- 2013Study of the Al-grading effect in the crystallisation of chalcopyrite Cu(In,Al)Se2 thin films selenised at different temperaturescitations
- 2013Crystallographic properties and elemental migration in two-stage prepared CuIn1−xAlxSe2 thin films for photovoltaic applicationscitations
- 2011Electrical, morphological and structural properties of RF magnetron sputtered Mo thin films for application in thin film photovoltaic solar cellscitations
- 2010CuInSe2 precursor films electro-deposited directly onto MoSe2citations
- 2010Optical properties of thin films of Cu2ZnSnSe4 fabricated by sequential deposition and selenisation
- 2010Control of grain size in sublimation-grown CdTe, and the improvement in performance of devices with systematically increased grain sizecitations
- 2010A feasibility study towards ultra-thin PV solar cell devices by MOCDV based on a p-i-n structure incorporating pyrite
- 2008New routes to sustainable photovoltaics: evaluation of Cu2ZnSnS4 as an alternative absorber materialcitations
Places of action
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conferencepaper
A feasibility study towards ultra-thin PV solar cell devices by MOCDV based on a p-i-n structure incorporating pyrite
Abstract
FeSx layers were deposited onto aluminosilicate glass substrates over a temperature range of 180°C to 500°C using a horizontal AP-MOCVD reactor. Fe(CO)5 was used as the Fe source in combination with t-Bu2S2 or t-BuSH as S precursor to control the rate of reaction and film stoichiometry. The Fe and S partial pressures were kept at 7.5 x 103 and 3.0 mbar, giving a gas phase S/Fe ratio of 400. Reactions followed a non-Arrhenius relationship at higher temperatures. XRD revealed mixed FeSx phases in the layers, which consisted mainly of FeS and Fe1-xS. Post growth annealing of the FeSx films using S powder in a static argon atmosphere and temperatures ranging from 250°C to 400°C was carried out using a 30 minute soak time. Characterisation by XRD confirmed a transitional phase change to FeS2 for the S anneal at 400°C. These films were highly absorbing in the visible region of the solar spectrum, which extended into the NIR. Devices with a p-i-n structure were produced using either a sulphurised or non-sulphurised FeSx i-layer, and compared to p-n devices without an i-layer. A non-sulphurised p-i-n device had the best I-V results, which was attributed to reduced lateral inhomogeneity across the device relative to the thinner p-n device structures. Devices with sulphurised FeSx i-layers performed least efficiently which is suspected to be due to a less defined FeSx/CdS junction caused by severe conditions during the S annealing process.