| People | Locations | Statistics |
|---|---|---|
| Naji, M. |
| |
| Motta, Antonella |
| |
| Aletan, Dirar |
| |
| Mohamed, Tarek |
| |
| Ertürk, Emre |
| |
| Taccardi, Nicola |
| |
| Kononenko, Denys |
| |
| Petrov, R. H. | Madrid |
|
| Alshaaer, Mazen | Brussels |
|
| Bih, L. |
| |
| Casati, R. |
| |
| Muller, Hermance |
| |
| Kočí, Jan | Prague |
|
| Šuljagić, Marija |
| |
| Kalteremidou, Kalliopi-Artemi | Brussels |
|
| Azam, Siraj |
| |
| Ospanova, Alyiya |
| |
| Blanpain, Bart |
| |
| Ali, M. A. |
| |
| Popa, V. |
| |
| Rančić, M. |
| |
| Ollier, Nadège |
| |
| Azevedo, Nuno Monteiro |
| |
| Landes, Michael |
| |
| Rignanese, Gian-Marco |
|
Dendzik, Maciej
KTH Royal Institute of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2022A machine learning route between band mapping and band structurecitations
- 2021Ultrafast dynamical Lifshitz transitioncitations
- 2018Quasi-free-standing single-layer WS2 achieved by intercalationcitations
- 2018Synthesis of large area and high quality MoS<SUB>2</SUB> on Au(111) monolayers with single domain orientation
- 2018Quasi-free-standing single-layer $mathrm{WS_{2}}$ achieved by intercalationcitations
- 2017Spin and valley control of free carriers in single-layer WS2citations
- 2017Ultrafast band structure control of a two-dimensional heterostructurecitations
- 2017Spin and valley control of free carriers in single-layer WS 2citations
- 2016Ultrafast Band Structure Control of a Two-Dimensional Heterostructurecitations
- 2016Ultrafast band structure control of a two-dimensional heterostructurecitations
- 2015Electronic Structure of Epitaxial Single-Layer MoS2citations
- 2015Electronic structure of epitaxial single-layer MoS2citations
- 2015Synthesis of Epitaxial Single-Layer MoS 2 on Au(111)citations
- 2015Synthesis of Epitaxial Single-Layer MoS2 on Au(111)citations
Places of action
| Organizations | Location | People |
|---|
document
Synthesis of large area and high quality MoS<SUB>2</SUB> on Au(111) monolayers with single domain orientation
Abstract
The employment of transition metal dichalcogenides, and in particular single layer (SL) MoS<SUB>2</SUB> for electronic devices, demands for a controllable growth of highly crystalline layers featuring large area with a low concentration of defects to preserve their outstanding electronic properties. Moreover, thanks to the peculiar electronic structure, new degrees of freedom are accessible allowing for spin- and valley-dependent phenomena, that can be retained in devices only through singly-oriented domains. Current chemical vapor deposition methods have not been able to achieve this and have produced mirror twin domains leading to the formation of domain boundaries and dislocations in the layer. We present a protocol for the synthesis through physical vapor deposition of SL MoS<SUB>2</SUB> on Au(111) with a single domain orientation. We demonstrate the structural properties using a combination of surface science techniques, including scanning tunneling microscopy and photoelectron diffraction. Angular resolved photoemission measurements (ARPES) confirmed the single layer character and the high structural quality of MoS<SUB>2</SUB> while the single domain orientation allowed the measurement, through Spin-resolved ARPES, of the complete spin polarization with spin reversal of the states near K and -K points. <P />...