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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Petrov, R. H. | Madrid |
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Bih, L. |
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Casati, R. |
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Kočí, Jan | Prague |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Tarazona, Antulio
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document
Laser processing of amorphous semiconductors on planar substrates for photonic and optoelectronic applications
Abstract
We report results of laser processing on amorphous silicon and silicon-germanium films deposited on planar substrates. Pre-patterned a-Si waveguides were recrystallized and reflowed to enhance their material and optical properties. Formation of millimeter long crystal grains and surface roughness of 0.52 nm enable optical losses to become as low as 5.3 dB/cm. Laser-driven phase separation in the binary alloy of a-SiGe allows fabrication of composition graded microstructures with Si-rich and Ge-rich regions. A composition tuning capability of 40% was demonstrated.