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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Hallam, Brett
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2023Design Considerations for the Bottom Cell in Perovskite / Silicon Tandems: An Industrial Perspectivecitations
- 2023Microwave annealing of silicon solar cellscitations
- 2017Impact of thermal processes on multi-crystalline siliconcitations
- 2016Rapid stabilization of high-performance multicrystalline p-type silicon PERC cells
- 2013Advanced bulk defect passivation for silicon solar cells
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article
Rapid stabilization of high-performance multicrystalline p-type silicon PERC cells
Abstract
Light-induced or, more broadly, carrier-induced degradation (CID) in high-performance multicrystalline silicon (TIP mc-Si) solar cells remains a serious issue for many manufacturers, and the root cause of the degradation is still unknown. In this paper, the impact of firing temperature on the stability of lifetime test structures is investigated, and it is found that substantial CID can be triggered if peak temperatures exceed approximately 700 °C. We then investigate two pathways to stabilize the performance of industrially produced TIP mc-Si passivated emitter rear contact cells which have been fired at CID-activating temperatures (~740 °C-800 °C) currently required for silver contact formation. The first is a fast-firing approach, whereby it is demonstrated that an additional firing step at a reduced temperature after cell metallization can suppress the extent of V oc degradation by up to 80%.