| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Iannuzzo, Francesco
Aalborg University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (14/14 displayed)
- 2024Proof-of-Concept for an On-Chip Kelvin-Emitter RTD Sensor for Junction Temperature Monitoring of IGBTscitations
- 2023Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductorscitations
- 2023Thermal Characteristics of Liquid Metal Interconnects for Power Semiconductorscitations
- 2019Comparative study of wire bond degradation under power and mechanical accelerated testscitations
- 2019Highly Reliable Package using Cu Particles Sinter Paste for Next Generation Power Devices
- 2019Cost-Effective Prognostics of IGBT Bond Wires With Consideration of Temperature Swingcitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Effect of short-circuit stress on the degradation of the SiO2 dielectric in SiC power MOSFETscitations
- 2018Effect of short-circuit stress on the degradation of the SiO 2 dielectric in SiC power MOSFETscitations
- 2018Failure analysis of a degraded 1.2 kV SiC MOSFET after short circuit at high temperaturecitations
- 2017Impact of bending speed and setup on flex cracks in multilayer ceramic capacitorscitations
- 2016Short-Circuit Robustness Assessment in Power Electronic Modules for Megawatt Applicationscitations
- 2005FPGA implementation of the race-control algorithm for the full-bridge passive resonant commutated poles converter
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document
Highly Reliable Package using Cu Particles Sinter Paste for Next Generation Power Devices
Abstract
A novel die-attach packaging material, sinterable Cu paste with self-reduction and self-protection properties, is proposed for high TJ semiconductor die-attach such as application in emerging wide-bandgap high-power devices. The results show that high bond strength exceeding 25 MPa can be realized by bonding at 300 deg C in N2 gas under low pressure. The joints with high bonding strength survived even after 1000h thermal storage test, 1000h humidity storage test and 1000 time thermal cycles. The high strength in the mild bond-process conditions as well as the high reliability promises the opportunity of thermo-stable die-attach technology required for next generation power device packaging. Die-attach for IGBT device was also prepared followed by power cycle test.