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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Bahman, Amir Sajjad
Aalborg University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (3/3 displayed)
- 2019Highly Reliable Package using Cu Particles Sinter Paste for Next Generation Power Devices
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
- 2018Thermal modeling of wire-bonded power modules considering non-uniform temperature and electric current interactionscitations
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document
Highly Reliable Package using Cu Particles Sinter Paste for Next Generation Power Devices
Abstract
A novel die-attach packaging material, sinterable Cu paste with self-reduction and self-protection properties, is proposed for high TJ semiconductor die-attach such as application in emerging wide-bandgap high-power devices. The results show that high bond strength exceeding 25 MPa can be realized by bonding at 300 deg C in N2 gas under low pressure. The joints with high bonding strength survived even after 1000h thermal storage test, 1000h humidity storage test and 1000 time thermal cycles. The high strength in the mild bond-process conditions as well as the high reliability promises the opportunity of thermo-stable die-attach technology required for next generation power device packaging. Die-attach for IGBT device was also prepared followed by power cycle test.