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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zhang, Guoqi
Delft University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Training Convolutional Neural Networks with Confocal Scanning Acoustic Microscopy Imaging for Power QFN Package Delamination Classification
- 2023Heterogeneous Integration of Diamond Heat Spreaders for Power Electronics Applicationcitations
- 2022Patterning of fine-features in nanoporous films synthesized by spark ablationcitations
- 2021Facile synthesis of ag nanowire/tio2 and ag nanowire/tio2/go nanocomposites for photocatalytic degradation of rhodamine bcitations
- 2020Vertically-Aligned Multi-Walled Carbon Nano Tube Pillars with Various Diameters under Compressioncitations
- 2020Toward a Self-Sensing Piezoresistive Pressure Sensor for all-SiC Monolithic Integrationcitations
- 2018Effects of Conformal Nanoscale Coatings on Thermal Performance of Vertically Aligned Carbon Nanotubescitations
- 2018Wafer Level Through Polymer Optical Vias (TPOV) Enabling High Throughput of Optical Windows Manufacturing
- 20163D interconnect technology based on low temperature copper nanoparticle sinteringcitations
- 2015An overview of scanning acoustic microscope, a reliable method for non-destructive failure analysis of microelectronic componentscitations
- 2010Theory of aluminum metallization corrosion in microelectronics
- 2009Reliability of Wafer Level Thin Film MEMS Packages during Wafer Backgrinding
- 2008Effect of aging of packaging materials on die surface cracking of a SiP carrier
- 2008Die Fracture Probability Prediction and Design Guidelines for Laminate-Based Over-Molded Packages
- 2007Modeling of the mechanical stiffness of the GaP/GaAs nanowires with point defects/stacking faults
- 2007Correlation between chemistry of polymer building blocks and microelectronics reliability
- 2007Effect of filler concentration of rubbery shear and bulk modulus of molding compounds
- 2007Micro-mechanical testing of SiLK by nanoindentation and substrate curvature techniques
- 2007Characterization of moisture properties of polymers for IC packaging
- 2005State-of-the-Art of Thermo-Mechanical Characterization of Thin Polymer Films
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document
Modeling of the mechanical stiffness of the GaP/GaAs nanowires with point defects/stacking faults
Abstract
The semiconductor type III-V nanowires (e.g., GaAs, GaP, InAs, InP, etc.) has excellent electronic/optical properties for the application of next-generation nano-scaled transistor, light-emitting diode and bio/chemical sensors. However, the electronic conductance of the nanowire is highly sensitive to the internal stress/strain condition under external loadings. In this paper, the mechanical stiffness of the GaAs and GaP nanowires are simulated, and the trend of the results are validated by the bulk experiments. The mechanical influence of the point defect and the stacking faults are considered. Moreover, an analytical solution is established to describe the mechanical stiffness decreasing of the stacking faults. The simulations indicate that the mechanical stiffness of the nanowire is influenced by the density of the stacking faults and the density of covalent bonds at the twin-dislocation interface.Key Words: III-V nano-scaled semiconductors, Molecular dynamics calculations, Stacking faults, Mechanical properties.