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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Reynolds, Steve
University of Dundee
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2024Constant Photocurrent Method to Probe the Sub‐Bandgap Absorption in Wide Bandgap Semiconductor Films: The Case of α‐Ga<sub>2</sub>O<sub>3</sub>citations
- 2019A new approach for determination of free carriers lifetime and density of localised states in disordered semiconductors
- 2017Photoconductivity in Materials Researchcitations
- 2014Electronic properties of undoped microcrystalline silicon oxide filmscitations
- 2012Properties of thin-film silicon solar cells at very high irradiancecitations
- 2012Stress characterization of thin microcrystalline silicon films
- 2010Excimer laser wet oxidation of hydrogenated amorphous siliconcitations
- 2010Measurement and modelling of transport in amorphous semiconductorscitations
- 2009Carrier mobility and density of states in microcrystalline silicon film compositions, probed using time-of-flight photocurrent spectroscopy
- 2005Computer modelling of non-equilibrium multiple-trapping and hopping transport in amorphous semiconductors
- 2004Decay from steady-state photocurrent in amorphous semiconductorscitations
- 2003Analysis and modelling of generation-recombination noise in amorphous semiconductorscitations
- 2002Probing localized states distributions in semiconductors by Laplace transform transient photocurrent spectroscopycitations
- 2002Transient decay from the steady-state in microcrystalline silicon
- 2001Depth profiling and the effect of oxygen and carbon on the photoelectrical properties of amorphous silicon films deposited using tungsten wire filamentscitations
- 2001Generation-recombination noise in amorphous semiconductorscitations
- 2000Improved high resolution post-transit spectroscopy for determining the density of states in amorphous semiconductors
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booksection
Transient decay from the steady-state in microcrystalline silicon
Abstract
We measured the transient photocurrent decay from the steady state in microcrystalline silicon from plasma-enhanced chemical vapor deposition and hot-wire chemical vapour deposition. Samples exhibiting a range of photoconductive properties in terms of both the majority and minority carrier mobility-lifetime products or sub-gap absorption coefficients were studied. Measurements were made over a wide range of steady-state photogeneration rates for which we detail the variation with generation rate of the decay time. Samples with a short steady-state photocarrier lifetime show a long decay time. We relate the slow decay process to the much larger density of traps in the band gap in the poor-quality samples. Trapped carriers are released, undergo emission and trapping processes and eventually recombine in these samples, on a much longer time-scale than in the higher-quality samples so that the decay time cannot be taken as a fingerprint for photo-electronic quality. Analytical and numerical modeling indicate bimolecular recombination behavior during the decay. Results are in agreement with free-carrier interaction with exponentially distributed band-tail states.