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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Leppäniemi, Jaakko
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2020Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectriccitations
- 2020Printed, Highly Stable Metal Oxide Thin-Film Transistors with Ultra-Thin High-κ Oxide Dielectriccitations
- 2015Gravure printed sol-gel derived AlOOH hybrid nanocomposite thin films for printed electronicscitations
- 2015Gravure printed sol-gel derived AlOOH hybrid nanocomposite thin films for printed electronicscitations
- 2014Sintering of inkjet printed silver tracks with boiling salt watercitations
- 2014Modelling of printable metal-oxide TFTs for circuit simulation
- 2012Water-based carbon-coated copper nanoparticle fluid:Formation of conductive layers at low temperature by spin coating and inkjet depositioncitations
- 2012Water-based carbon-coated copper nanoparticle fluidcitations
- 2010Substrate-facilitated nanoparticle sintering and component interconnection procedurecitations
- 2010Electrical Sintering of Conductor Grids for Optoelectronic Devices
- 2010Printable WORM and FRAM memories and their applications
Places of action
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document
Printable WORM and FRAM memories and their applications
Abstract
This paper reports on the current status of the printed memory development in the PriMeBits EU FP7/ICT project (2008-2010). <br/>The two memory technologies under development are: (1) resistive write-once-read-many memory (WORM) based on rapid electrical sintering (RES) of silver nanoparticle structures, and (2) ferroelectric read-and-write memory (FRAM) based on BaTiO3 composite. <br/>Application scenarios and demonstrator activities are described.