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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zhang, Guoqi
Delft University of Technology
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2024Training Convolutional Neural Networks with Confocal Scanning Acoustic Microscopy Imaging for Power QFN Package Delamination Classification
- 2023Heterogeneous Integration of Diamond Heat Spreaders for Power Electronics Applicationcitations
- 2022Patterning of fine-features in nanoporous films synthesized by spark ablationcitations
- 2021Facile synthesis of ag nanowire/tio2 and ag nanowire/tio2/go nanocomposites for photocatalytic degradation of rhodamine bcitations
- 2020Vertically-Aligned Multi-Walled Carbon Nano Tube Pillars with Various Diameters under Compressioncitations
- 2020Toward a Self-Sensing Piezoresistive Pressure Sensor for all-SiC Monolithic Integrationcitations
- 2018Effects of Conformal Nanoscale Coatings on Thermal Performance of Vertically Aligned Carbon Nanotubescitations
- 2018Wafer Level Through Polymer Optical Vias (TPOV) Enabling High Throughput of Optical Windows Manufacturing
- 20163D interconnect technology based on low temperature copper nanoparticle sinteringcitations
- 2015An overview of scanning acoustic microscope, a reliable method for non-destructive failure analysis of microelectronic componentscitations
- 2010Theory of aluminum metallization corrosion in microelectronics
- 2009Reliability of Wafer Level Thin Film MEMS Packages during Wafer Backgrinding
- 2008Effect of aging of packaging materials on die surface cracking of a SiP carrier
- 2008Die Fracture Probability Prediction and Design Guidelines for Laminate-Based Over-Molded Packages
- 2007Modeling of the mechanical stiffness of the GaP/GaAs nanowires with point defects/stacking faults
- 2007Correlation between chemistry of polymer building blocks and microelectronics reliability
- 2007Effect of filler concentration of rubbery shear and bulk modulus of molding compounds
- 2007Micro-mechanical testing of SiLK by nanoindentation and substrate curvature techniques
- 2007Characterization of moisture properties of polymers for IC packaging
- 2005State-of-the-Art of Thermo-Mechanical Characterization of Thin Polymer Films
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article
Theory of aluminum metallization corrosion in microelectronics
Abstract
We present a time-dependent numerical model for corrosion in microelectronics, focusing on aluminum bondpads, which can be very beneficial for the design as well as the interpretation of reliability data of microelectronics. The model includes charge transport through the polymer microelectronics encapsulant as well as the formation of layers of space charge at all polymer interfaces, which strongly influences the electrochemical charge transfer rate at the polymer¿metal interfaces via the generalized Frumkin¿Butler¿Volmer equation. The system we consider consists of two parallel gold bondwires that are each electrically connected to two aluminum bondpads, which are assumed to contain weak spots in the protective native oxide layer, i.e. pits. This system is encapsulated in an epoxy molding compound, which is the usual low-conductive, and slightly hydrophilic, microelectronic encapsulant. We assume that a cathodic reaction takes place at the gold wires, and an anodic reaction at the weak spots of the aluminum bondpads. Furthermore,weassume the presence of a large excess of inert supporting salt compared to the reactive hydroxyl ions. Numerical calculations were made in a two-dimensional geometry as function of the applied voltage difference between the two wires, the concentration of absorbed moisture in the encapsulation, and the ambient temperature. We show that the model results predict trends similar to the empirical industrial standards for failure of microelectronic products due to corrosion.