| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mrkyvkova, Nada
Slovak Academy of Sciences
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2024Unraveling Bulk versus Surface Passivation Effects in Highly Efficient p–<i>i</i>–n Perovskite Solar Cells Using Thiophene‐Based Cationscitations
- 2024Deciphering the Formation Process of 2D to 3D Halide Perovskite Thin Films
- 2024A dual strategy to enhance the photoelectric performance of Perovskite-Based photodetectors for potential applications in optical communicationscitations
- 2024Pizza oven processing of organohalide perovskites (POPOP): a simple, versatile and efficient vapor deposition methodcitations
- 2021Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenescitations
- 2021Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenescitations
- 2021Early-stage growth observations of orientation-controlled vacuum-deposited naphthyl end-capped oligothiophenescitations
- 2020Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by In Situ X-ray Diffractioncitations
- 2020Surface-Controlled Crystal Alignment of Naphthyl End-Capped Oligothiophene on Graphene: Thin-Film Growth Studied by in Situ X-ray Diffractioncitations
- 2012Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As
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document
Establishing micromagnetic parameters of ferromagnetic semiconductor (Ga,Mn)As
Abstract
(Ga,Mn)As is at the forefront of research exploring the synergy of magnetism with the physics and technology of semiconductors, and has led to discoveries of new spin-dependent phenomena and functionalities applicable to a wide range of material systems. Its recognition and utility as an ideal model material for spintronics research has been undermined by the large scatter in reported semiconducting doping trends and micromagnetic parameters. In this paper we establish these basic material characteristics by individually optimizing the highly non-equilibrium synthesis for each Mn-doping level and by simultaneously determining all micromagnetic parameters from one set of magneto-optical pump-and-probe measurements. Our (Ga,Mn)As thin-film epilayers, spannig the wide range of accessible dopings, have sharp thermodynamic Curie point singularities typical of uniform magnetic systems. The materials show systematic trends of increasing magnetization, carrier density, and Curie temperature (reaching 188 K) with increasing doping, and monotonous doping dependen ce of the Gilbert damping constant of ~0.1-0.01 and the spin stiffness of ~2-3 meVnm^2. These results render (Ga,Mn)As well controlled degenerate semiconductor with basic magnetic characteristics comparable to common band ferromagnets.