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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Autieri, Carmine
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (11/11 displayed)
- 2024CdTe and HgTe doped with V, Cr, and Mn: Prospects for the quantum anomalous Hall effectcitations
- 2023Engineering axion insulator and other topological phases in superlattices without inversion symmetrycitations
- 2022Topological states in superlattices of HgTe class of materials for engineering three-dimensional flat bandscitations
- 2022Electronic and optical properties of InAs/InAs0.625Sb0.375 superlattices and their application for far-infrared detectorscitations
- 2021Superexchange dominates in magnetic topological insulatorscitations
- 2021Momentum-resolved spin splitting in Mn-doped trivial CdTe and topological HgTe semiconductorscitations
- 2020Coupling Lattice Instabilities across the Interface in Ultrathin Oxide Heterostructurescitations
- 2019Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7citations
- 2019Persistent spin helix in Rashba-Dresselhaus ferroelectric CsBiNb2O7
- 2018Berry phase engineering at oxide interfaces
- 2017Atomic-scale engineering of ferroelectric-ferromagnetic interfaces of epitaxial perovskite films for functional propertiescitations
Places of action
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document
Berry phase engineering at oxide interfaces
Abstract
Geometric phases in condensed matter play a central role in topological transport phenomena such as the quantum, spin and anomalous Hall effect (AHE). In contrast to the quantum Hall effect - which is characterized by a topological invariant and robust against perturbations - the AHE depends on the Berry curvature of occupied bands at the Fermi level and is therefore highly sensitive to subtle changes in the band structure. A unique platform for its manipulation is provided by transition metal oxide heterostructures, where engineering of emergent electrodynamics becomes possible at atomically sharp interfaces. We demonstrate that the Berry curvature and its corresponding vector potential can be manipulated by interface engineering of the correlated itinerant ferromagnet SrRuO$_3$ (SRO). Measurements of the AHE reveal the presence of two interface-tunable spin-polarized conduction channels. Using theoretical calculations, we show that the tunability of the AHE at SRO interfaces arises from the competition between two topologically non-trivial bands. Our results demonstrate how reconstruc tions at oxide interfaces can be used to control emergent electrodynamics on a nanometer-scale, opening new routes towards spintronics and topological electronics.