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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Barreto, Jorge
University of Bristol
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020An integrated optical modulator operating at cryogenic temperaturescitations
- 2019An integrated cryogenic optical modulator
- 2019An integrated cryogenic optical modulator
- 2019First cryogenic electro-optic switch on silicon with high bandwidth and low power tunabilitycitations
- 2013DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitorscitations
- 2013DC electroluminescence efficiency of silicon rich silicon oxide light emitting capacitorscitations
- 2012Comparison of electrical and electro-optical characteristics of light-emitting capacitors based on silicon-rich Si-oxide fabricated by plasma-enhanced chemical vapor deposition and ion implantationcitations
- 2012Resolving the ultrafast dynamics of charge carriers in nanocompositescitations
- 2007Comparative study between silicon-rich oxide films obtained by LPCVD and PECVDcitations
- 2006Field effect luminescence from Si nanocrystals obtained by plasma-enhanced chemical vapor depositioncitations
Places of action
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article
An integrated cryogenic optical modulator
Abstract
Integrated electrical and photonic circuits (PIC) operating at cryogenic temperatures are fundamental building blocks required to achieve scalable quantum computing, and cryogenic computing technologies. Optical interconnects offer better performance and thermal insulation than electrical wires and are imperative for true quantum communication. Silicon PICs have matured for room temperature applications but their cryogenic performance is limited by the absence of efficient low temperature electro-optic (EO) modulation. While detectors and lasers perform better at low temperature, cryogenic optical switching remains an unsolved challenge. Here we demonstrate EO switching and modulation from room temperature down to 4 K by using the Pockels effect in integrated barium titanate (BaTiO3)-based devices. We report the nonlinear optical (NLO) properties of BaTiO3 in a temperature range which has previously not been explored, showing an effective Pockels coefficient of 200 pm/V at 4 K. We demonstrate the largest EO bandwidth (30 GHz) of any cryogenic switch to date, ultra-low-power tuning which is 10^9 times more efficient than thermal tuning, and high-speed data modulation at 20 Gbps. Our results demonstrate a missing component for cryogenic PICs. It removes major roadblocks for the realisation of novel cryogenic-compatible systems in the field of quantum computing and supercomputing, and for interfacing those systems with the real world at room-temperature.