Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (2/2 displayed)

  • 2019Supercurrent Interference in Semiconductor Nanowire Josephson Junctionscitations
  • 2018Nonequilibrium Green's function study of magnetoconductance features and oscillations in clean and disordered nanowires14citations

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Muralidharan, Bhaskaran
2 / 4 shared
Sriram, Praveen
1 / 1 shared
Kalantre, Sandesh S.
1 / 1 shared
Lahiri, Aritra
1 / 1 shared
Chart of publication period
2019
2018

Co-Authors (by relevance)

  • Muralidharan, Bhaskaran
  • Sriram, Praveen
  • Kalantre, Sandesh S.
  • Lahiri, Aritra
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document

Supercurrent Interference in Semiconductor Nanowire Josephson Junctions

  • Gharavi, Kaveh
  • Muralidharan, Bhaskaran
  • Sriram, Praveen
  • Kalantre, Sandesh S.
Abstract

Semiconductor-superconductor hybrid systems provide a promising platform for hosting unpaired Majorana fermions towards the realisation of fault-tolerant topological quantum computing. In this study, we employ the Keldysh Non-Equilibrium Green's function formalism to model quantum transport in normal-superconductor junctions. We analyze III-V semiconductor nanowire Josephson junctions (InAs/Nb) using a three-dimensional discrete lattice model described by the Bogolubov-de Gennes Hamiltonian in the tight-binding approximation, and compute the Andreev bound state spectrum and current-phase relations. Recent experiments [Zuo et al., Phys.\ Rev.\ Lett.\ {119},187704 (2017)] and [Gharavi et al., arXiv:1405.7455v2 (2014)] reveal critical current oscillations in these devices, and our simulations confirm these to be an interference effect of the transverse sub-bands in the nanowire. We add disorder to model coherent scattering and study its effect on the critical current oscillations, with an aim to gain a thorough understanding of the experiments. The oscillations in the disordered junction are highly sensitive to the particular realisation of the random disorder potential, and to the gate voltage. A macroscopic current measurement thus gives us information about the microscopic profile of the junction. Finally, we study dephasing in the channel by including elastic electron-phonon interactions. The oscillations thus obtained are in excellent qualitative agreement with the experimental data, and this signifies the essential role of phase-breaking processes in III-V semiconductor nanowire Josephson junctions....

Topics
  • phase
  • experiment
  • simulation
  • random
  • III-V semiconductor