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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Gharavi, Kaveh
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document
Supercurrent Interference in Semiconductor Nanowire Josephson Junctions
Abstract
Semiconductor-superconductor hybrid systems provide a promising platform for hosting unpaired Majorana fermions towards the realisation of fault-tolerant topological quantum computing. In this study, we employ the Keldysh Non-Equilibrium Green's function formalism to model quantum transport in normal-superconductor junctions. We analyze III-V semiconductor nanowire Josephson junctions (InAs/Nb) using a three-dimensional discrete lattice model described by the Bogolubov-de Gennes Hamiltonian in the tight-binding approximation, and compute the Andreev bound state spectrum and current-phase relations. Recent experiments [Zuo et al., Phys.\ Rev.\ Lett.\ {119},187704 (2017)] and [Gharavi et al., arXiv:1405.7455v2 (2014)] reveal critical current oscillations in these devices, and our simulations confirm these to be an interference effect of the transverse sub-bands in the nanowire. We add disorder to model coherent scattering and study its effect on the critical current oscillations, with an aim to gain a thorough understanding of the experiments. The oscillations in the disordered junction are highly sensitive to the particular realisation of the random disorder potential, and to the gate voltage. A macroscopic current measurement thus gives us information about the microscopic profile of the junction. Finally, we study dephasing in the channel by including elastic electron-phonon interactions. The oscillations thus obtained are in excellent qualitative agreement with the experimental data, and this signifies the essential role of phase-breaking processes in III-V semiconductor nanowire Josephson junctions....