• Mishra, U. K.
• Parish, Giacinta
• Zhang, N. Q.
• Keller, S.
• Heikman, S.
• Denbaars, S. P.

Abstract

<p>GaN high electron mobility transistors (HEMTs) were fabricated using an overlapping-gate technique in which the drain-side edge of the metal gate overlaps on a high breakdown and high dielectric constant dielectric. The overlapping structure reduces the electric field at the drain-side gate edge, thus increasing the breakdown of the device. A record-high three-terminal breakdown figure of 570 V was achieved on a HEMT with a gate-drain spacing of 13 μm. The source-drain saturation current was 500 mA/mm and the extrinsic transconductance 150 mS/mm.</p>

Topics

• mobility
• dielectric constant
• mass spectrometry