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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Kočí, Jan | Prague |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Ali, M. A. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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Ryan, Philip
in Cooperation with on an Cooperation-Score of 37%
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Publications (5/5 displayed)
- 2002Polymorphism in alcohol‐metabolizing enzymes, glutathione-S-transferases and apolipoprotein E and susceptibility to alcohol‐induced cirrhosis and chronic pancreatitiscitations
- 2002Band-gap evolution, hybridization, and thermal stability of InxGa1-xN alloys measured by soft X-ray emission and absorptioncitations
- 2002X-ray spectroscopic studies of the bulk electronic structure of InGaN alloys
- 2001Metabolic genotypes and risk for colorectal cancercitations
- 2001Synchrotron based studies of III-V semiconductor materials
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article
X-ray spectroscopic studies of the bulk electronic structure of InGaN alloys
Abstract
<p>Synchrotron radiation excited soft x-ray emission and soft x-ray absorption spectroscopies are applied to the study of the electronic structure of In<sub>x</sub>Ga<sub>1-x</sub>N alloys with (0 ≤ x ≤ 0.29). The elementally resolved partial density of states of the valence and conduction bands may be measured using these spectroscopies. The x-ray absorption spectra indicate that the conduction band broadens considerably with increasing indium incorporation. The band gap evolution as a function of indium content derives primarily from this broadening of the conduction band states. The emission spectra indicate that motion of the valence band makes a smaller contribution to the evolution of the band gap. This gap evolution differs from previous studies on the Al<sub>x</sub>Ga<sub>1-x</sub>N alloy system, which observed a linear valence band shift through the series (0 ≤ x ≤ 1). Instead in the case of In<sub>x</sub>Ga<sub>1-x</sub>N the valence band exhibits a significant shift between x = 0 and x = 0.1 with minimal movement thereafter. Furthermore, evidence of In 4d -N 2p and Ga 3d - N 2p hybridisation is reported. Finally, the thermal stability of an In<sub>0.11</sub>Ga<sub>0.89</sub>N film was investigated. Both emission and absorption spectra were found to have a temperature dependent shift in energy, but the overall definition of the spectra was unaltered even at annealing temperatures well beyond the growth temperature of the film.</p>