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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Panajotov, Krassimir
Vrije Universiteit Brussel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2019Electro-Absorption Modulator vertically integrated on a VCSEL: microstrip-based high-speed electrical injection on top of a BCB layercitations
- 2017Oxide-confined VCSELs fabricated with a simple self-aligned process flowcitations
- 2017Single lithography-step self-aligned fabrication process for Vertical-Cavity Surface-Emitting Laserscitations
- 2017Strain induced polarization chaos in a solitary VCSELcitations
- 2016Self-aligned BCB planarization method for high frequency signal injection in a VCSEL with an integrated modulatorcitations
- 2013Polarization Dynamics of VCSELs
- 2012Monitoring of gamma-irradiated Yb-doped optical fibers through pump induce refractive index changes effect
- 2010Photonic crystal vertical-cavity surface-emitting lasers with true photonic bandgap
- 2007Optimal radii of photonic crystal holes within DBR mirrors in long wavelength VCSEL
- 2002Polarization Behavior of Vertical-Cavity Surface-Emitting Lasers under the Influence of In-Plane Anisotropic Strain
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document
Polarization Behavior of Vertical-Cavity Surface-Emitting Lasers under the Influence of In-Plane Anisotropic Strain
Abstract
It is well known that vertical-cavity surface-emitting lasers (VCSELs) can abruptly switch between two orthogonal linear polarization states if the current is changed. The impact of externally induced in-plane anisotropic strain on this switching was experimentally demonstrated in proton-implanted devices.' In this contribution we present a further and thorough experimental investigation of the polarization behavior of different types of VCSELs (proton-implanted, air-post and oxide-confined), under varying strain conditions. We first measure the influence of the strain on the orientation of the axes of the linear polarization states. These axes can be rotated from the crystallographic direction [110] over [100] to [1 (1) over bar0]. At the same time, we monitor the exact birefringence. From the combination of these two measurements the amount of residual strain in these devices is deduced. Applying strain not only changes the frequency splitting between the two modes (due to birefringence) and their orientation, but also lifts the degeneracy in the gain of the polarization modes. We therefore also measure the gain difference (dichroism) as a function of the applied strain, via the mode suppression ratio and the optical spectrum. Due to the effect on both the birefringence and the dichroism, strain also changes the position of the polarization switching point as a function of current and can lead to the observation of double (consecutive) polarization switching. All this experimental evidence will help to build up a better understanding of the physics of polarization switching in VCSELs.