| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Epurescu, G.
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Publications (4/4 displayed)
- 2017Characterization of CdS-doped glass films obtained by pulsed laser deposition
- 2009Pulsed-laser deposition of smooth thin films of Er, Pr and Nd doped glassescitations
- 2005Imaging the dissociation processs of O2 background gas during pulsed laser ablation of LiNbO3citations
- 2004Properties of BaTiO3 thin films deposited by radiofrequency beam discharge assisted pulsed laser depositioncitations
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article
Characterization of CdS-doped glass films obtained by pulsed laser deposition
Abstract
In the present work we study the optical, struc-tural and morphological properties of CdS-doped glass films, deposited by Pulsed Laser Deposition (PLD) method. The glass target used for ablation was prepared by conventional melt-quenching technique and the semiconductor dopant, CdS powder, was embedded in the borosilicate melt glass host by continuous stirring. In order to improve the properties of the films, the laser wavelength was modified. Photoluminescence emission (PL) of CdSdoped glass films revealed a broad band located in the visible range. The structural analysis was carried out by micro-Raman spectroscopy, pointing out specific vibration modes for Si-O-Si bonds as well as for CdS dopant. The morphology and the chemical characterization of the films were investigated by Scanning Electron Microscopy (SEM), Energy Dispersive X-ray spectroscopy (EDX) and Atomic Force Microscopy (AFM).