| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kadkhodazadeh, Shima
Technical University of Denmark
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (23/23 displayed)
- 2022Photo-stimulated hydrogen desorption from magnesium nanoparticlescitations
- 2022Photo-stimulated hydrogen desorption from magnesium nanoparticlescitations
- 2022High resolution crystal orientation mapping of ultrathin films in SEM and TEMcitations
- 2022High resolution crystal orientation mapping of ultrathin films in SEM and TEMcitations
- 2021Initiation and Progression of Anisotropic Galvanic Replacement Reactions in a Single Ag Nanowire:Implications for Nanostructure Synthesiscitations
- 2021Initiation and Progression of Anisotropic Galvanic Replacement Reactions in a Single Ag Nanowirecitations
- 2020Aminopropylsilatrane Linkers for Easy and Fast Fabrication of High-Quality 10 nm Thick Gold Films on SiO2 Substratescitations
- 2020Optical and electronic properties of low-density InAs/InP quantum-dot-like structures designed for single-photon emitters at telecom wavelengthscitations
- 2020Aminopropylsilatrane Linkers for Easy and Fast Fabrication of High-Quality 10 nm Thick Gold Films on SiO 2 Substratescitations
- 2019Rationally Designed PdAuCu Ternary Alloy Nanoparticles for Intrinsically Deactivation-Resistant Ultrafast Plasmonic Hydrogen Sensingcitations
- 2019Metal-polymer hybrid nanomaterials for plasmonic ultrafast hydrogen detectioncitations
- 2019Metal-polymer hybrid nanomaterials for plasmonic ultrafast hydrogen detectioncitations
- 2019Optical property – composition correlation in noble metal alloy nanoparticles studied with EELScitations
- 2018Probing the chemistry of adhesion between a 316L substrate and spin-on-glass coatingcitations
- 2017The substrate effect in electron energy-loss spectroscopy of localized surface plasmons in gold and silver nanoparticlescitations
- 2017The substrate effect in electron energy-loss spectroscopy of localized surface plasmons in gold and silver nanoparticlescitations
- 2017Interfacial Interaction of Oxidatively Cured Hydrogen Silsesquioxane Spin-On-Glass Enamel with Stainless Steel Substratecitations
- 2017Broadband infrared absorption enhancement by electroless-deposited silver nanoparticlescitations
- 2014New amorphous interface for precipitate nitrides in steelcitations
- 2013Electron Energy Loss and One- and Two-Photon Excited SERS Probing of “Hot” Plasmonic Silver Nanoaggregatescitations
- 2011Towards quantitative three-dimensional characterisation of InAs quantum dots
- 2010Mapping boron in silicon solar cells using electron energy-loss spectroscopy
- 2010Mapping boron in silicon solar cells using electron energy-loss spectroscopy
Places of action
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document
Mapping boron in silicon solar cells using electron energy-loss spectroscopy
Abstract
Amorphous silicon solar cells typically consist of stacked layers deposited on plastic or metallic substrates making sample preparation for transmission electron microscopy (TEM) difficult. The amorphous silicon layer - the active part of the solar cell - is sandwiched between 10-nm-thick n- and p-doped layers. The typical boron concentration in the p-doped layer is ~10^21cm -3 and should not exceed 1017cm-3 in the neighbouring intrinsic (i) layer [1], where it acts as a charge recombination centre and decreases the internal electric field [2]. The detection of low boron concentrations with high spatial resolution using TEM is highly challenging [3]. Recently, scanning TEM (STEM) combined with electron energy-loss spectroscopy (EELS) and spherical aberration-correction has allowed the direct detection of dopant concentration of 10^20cm-3 in 65-nm-wide silicon devices [4]. Here, we prepare TEM samples by focused ion beam milling in order to map the boron distribution across a 200-nm-thick n-p amorphous silicon junction using energy-filtered TEM and EELS spectrum acquisition. EELS line scans are used to detect boron concentrations as low as 10^20cm-3. We also use monochromated EELS to measure changes in the energies of plasmon peaks in the low loss region [5]. We use these approaches to characterize both a thick n-p junction and the 10-nm-thick p-doped layer of a working solar cell.[1] U. Kroll, C. Bucher, S. Benagli, I. Schönbächler, J. Meier, A. Shah, J. Ballutaud, A. Howling, Ch. Hollenstein, A. Büchel, M. Poppeller, Thin Solid Films 451 (2004) 525[2] B. Rech, H. Wagner, Applied Physics A 69 (1999) 155[3] C.B. Boothroyd, K. Sato, K. Yamada, Proceedings of the XIIth international congress for electron microscopy, ed LD Peachey and DB Williams (San Francisco Press, San Francisco, 1990) 80[4] K. Asayama, N. Hashikawa, K. Kajiwara, T. Yaguchi, M. Konno, H. Mori, Applied Physics Express 1 (2008) 074001[5] V. Olevano, L. Reining, Physical Review Letters 86 (2001) 5962