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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Adamopoulos, George
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Solution-Processed Metal Oxide Gate Dielectrics and Their Implementations in Zinc Oxide Based Thin Film Transistors
- 2022Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °ccitations
- 2018Characterization of spray pyrolyzed Ga2O3 thin films for thin-film transistor device applications
- 2018(INVITED) Solution-processed metal oxide-based CMOS
- 2017Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in aircitations
- 2017Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air
- 2017(INVITED) Solution processed metal oxide-based electronics for displays applications employing both inkjet and spray coating techniques
- 2016(INVITED) Solution Processed SiO2 and high-k Dielectrics for MO-based CMOS TFTs
- 2016(INVITED) Solution Processed High-k Dielectrics for Thin Film Transistors Employing Metal Oxide-based Semiconducting Channels
- 2014Solution processed aluminium titanate dielectrics for their applications in high mobility ZnO based thin film transistors
- 2014Structure and properties of solution processed hafnium oxide gate dielectrics for their applications in high mobility ZnO based thin film transistors
- 2013Be-doped ZnO thin-film transistors and circuits fabricated by spray pyrolysis in aircitations
- 2011Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistorscitations
- 2005Optical and electronic properties of plasma-deposited hydrogenated amorphous carbon nitride and carbon oxide filmscitations
- 2004Hydrogen content estimation of hydrogenated amorphous carbon by visible Raman spectroscopycitations
- 2003The electrochemical reactivity of amorphous hydrogenated carbon nitrides for varying nitrogen contents: the role of the substratecitations
- 2000Determination of bonding in amorphous carbons by electron energy loss spectroscopy, Raman scattering and X-ray reflectivitycitations
Places of action
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document
Characterization of spray pyrolyzed Ga2O3 thin films for thin-film transistor device applications
Abstract
There has been a growing interest of the applications of wide bandgap semiconductors in solar cells, UV photodetectors, power devices, and backplane technology in display devices due to their unique optical and electron transport properties. Thus, wide bandgap materials such as amorphous zinc silicate (a-ZSO), indium oxide (In2O3), and indium gallium zinc oxide (IGZO) are finding their way into most display devices due to the aforementioned characteristics. Additionally, low-cost processing methods such as spray pyrolysis (SP)6 have been gaining attention due to the ability to manufacture devices with a minimal need for vacuum processes. A relatively less explored metal oxide is Ga2O3, a material with a wide (direct) bandgap in the range between 4.4 and 4.9 eV, and an electric field strength which is higher than SiC and GaN. There are only a handful of studies on the implementation Ga2O3 in TFTs regardless of the materials promising physical properties. In this regard, we present a facile method of fabricating Ga2O3 films through spray pyrolysis. The films were characterized by a wide range of techniques including UV-Vis, spectroscopic ellipsometry, FTIR, AFM, GIXRD and field effect measurements to ascertain their structural and electronic properties. Through thermogravimetric analysis and differential scanning calorimetry (TGA/DSC), the decomposition and crystallization temperature of the GaCl3 precursor was determined and this analysis constituted the reference of the resulting films structures and device properties.Ga2O3 films were obtained by spray coating of 0.1 M solutions of GaCl3 in ethanol and methanol. The film deposition was occurred in ambient air at a substrate temperature of about 450C.Analyses revealed films of band gap of about ~4.95 consistent with the values reported for Ga2O3 films. FTIR and TGA/DSC data show the presence of amorphous and β-Ga2O3 films at temperatures <450C and >450C respectively as confirmed by GIXRD. The amorphous to β-Ga2O3 phase transition dramatically affected the performance of the Ga2O3-based TFTs where electron mobilities in excess of 20 cm2/Vs and on/off current modulation ratio on the order of 107 were recorded for TFTs implementing β-Ga2O3.