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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Adamopoulos, George
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (17/17 displayed)
- 2023Solution-Processed Metal Oxide Gate Dielectrics and Their Implementations in Zinc Oxide Based Thin Film Transistors
- 2022Solution-processed thin film transistors incorporating YSZ gate dielectrics processed at 400 °ccitations
- 2018Characterization of spray pyrolyzed Ga2O3 thin films for thin-film transistor device applications
- 2018(INVITED) Solution-processed metal oxide-based CMOS
- 2017Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in aircitations
- 2017Structural and electrical characterization of SiO2 gate dielectrics deposited from solutions at moderate temperatures in air
- 2017(INVITED) Solution processed metal oxide-based electronics for displays applications employing both inkjet and spray coating techniques
- 2016(INVITED) Solution Processed SiO2 and high-k Dielectrics for MO-based CMOS TFTs
- 2016(INVITED) Solution Processed High-k Dielectrics for Thin Film Transistors Employing Metal Oxide-based Semiconducting Channels
- 2014Solution processed aluminium titanate dielectrics for their applications in high mobility ZnO based thin film transistors
- 2014Structure and properties of solution processed hafnium oxide gate dielectrics for their applications in high mobility ZnO based thin film transistors
- 2013Be-doped ZnO thin-film transistors and circuits fabricated by spray pyrolysis in aircitations
- 2011Structural and Electrical Characterization of ZnO Films Grown by Spray Pyrolysis and Their Application in Thin-Film Transistorscitations
- 2005Optical and electronic properties of plasma-deposited hydrogenated amorphous carbon nitride and carbon oxide filmscitations
- 2004Hydrogen content estimation of hydrogenated amorphous carbon by visible Raman spectroscopycitations
- 2003The electrochemical reactivity of amorphous hydrogenated carbon nitrides for varying nitrogen contents: the role of the substratecitations
- 2000Determination of bonding in amorphous carbons by electron energy loss spectroscopy, Raman scattering and X-ray reflectivitycitations
Places of action
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document
Structure and properties of solution processed hafnium oxide gate dielectrics for their applications in high mobility ZnO based thin film transistors
Abstract
In recent years a wide variety of soluble precursors have been investigated as potential alternatives for the fabrication of oxide-based TFTs using large area deposition methods including spin casting, dip coating and spray pyrolysis. The ever increasing demand for high performance thin film transistors based on metal oxide channels has given a boost to the development of alternatives to SiO2 gate dielectrics with desirable characteristics in terms of thermal stability, band offset, interface quality and ability to control the FET’s gate threshold voltage. Among these, ZrO2, HfO2, Y2O3 and Al2O3 are the most studied dielectrics and are widely considered to be excellent candidates because of their high dielectric constants, good thermal stability and large band gaps. This work reports on the structure and properties of spray pyrolysis-grown HfO2 thin films and their implementation in ZnO-based TFTs. The HfO2 films were found to be of monoclinic crystal structure with a band gap of 5.7 eV, dielectric constant as high as 19, very low leakage currents and dielectric breakdown in excess of 2.7 MV/cm. The related ZnO based TFTs exhibit excellent electron transport characteristics with negligible hysteresis, operating voltages in the range between 5-6 V, high electron mobility on the order of 40 cm2 V−1 s−1 and high current on/off ratio of about 10^7.