693.932 PEOPLE
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Young, Robert
Lancaster University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2019Graphene and related materials in hierarchical fiber composites: production techniques and key industrial benefitscitations
- 2017Strain-induced phonon shifts in tungsten disulfide nanoplatelets and nanotubescitations
- 2017Large-Area 2D-0D Heterostructures via Langmuir-Blodgett Film Deposition
- 2017SPM characterisation of nanomechanical proprieties of C60 monolayer formed by LB
- 2017Influence of the chemical functionalization of graphene on the properties of polypropylene-based nanocompositescitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2013Rapid thermal annealing and photoluminescence of type-II GaSb single monolayer quantum dot stackscitations
- 2007Control of fine-structure splitting of individual InAs quantum dots by rapid thermal annealingcitations
- 2006Encapsulated single photon emission device
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patent
Encapsulated single photon emission device
Abstract
The device comprises a quantum dot and a Bragg reflector 32 formed from III-V semiconductor layers. An encapsulating layer of SiN 36 surrounds the device layer structure which prevents desorption of semiconductor material or the electrostatic electrode pattern 37 being affected during high temperature annealing. A photonic cavity may be used to define an optical cavity and electrostatic electrodes may be used to select one quantum dot from an ensemble for device operation. The encapsulating layer may be removed to complete the device fabrication process. The device may operate by electrical or optical excitation.