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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Sefcik, Jan
University of Strathclyde
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2023Machine Learning-Derived Correlations for Scale-Up and Technology Transfer of Primary Nucleation Kinetics.
- 2023Machine learning derived correlations for scale-up and technology transfer of primary nucleation kineticscitations
- 2019Measuring secondary nucleation through single crystal seedingcitations
- 2018Enabling precision manufacturing of active pharmaceutical ingredientscitations
- 2017Kinetics of early stages of resorcinol-formaldehyde polymerization investigated by solution phase nuclear magnetic resonance spectroscopycitations
- 2013250 nm glycine-rich nanodroplets are formed on dissolution of glycine crystals but are too small to provide productive nucleation sitescitations
- 2011Structure of laponite-styrene precursor dispersions for production of advanced polymer-clay nanocompositescitations
- 2009Characterization of arsenic-rich waste slurries generated during GaAs wafer lapping and polishing
- 2008Formation of valine microcrystals through rapid antisolvent precipitationcitations
- 2003Monte Carlo simulations of size and structure of gel precursors in silica polycondensationcitations
Places of action
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document
Characterization of arsenic-rich waste slurries generated during GaAs wafer lapping and polishing
Abstract
The toxicology of gallium arsenide is well established; it is classified by the state of California as a known carcinogen. Consequently, environmental aspects of GaAs wafer manufacture are coming under greater scrutiny, with the cost of waste disposal becoming an economic issue for fabs operating under this jurisdiction. It is estimated that 85% of a GaAs boule is lost during manufacturing and device packaging, which usually ends up land filled as hazardous waste. This percentage is likely to increase as final wafer thickness is reduced to improve thermal dissipation. GaAs wafer backthinning and polishing generates waste slurries that are contaminated by arsenic and must be disposed of as hazardous waste. Although GaAs is largely insoluble in H2O, it is readily oxidized to soluble oxides and hydroxides, especially during chemo-mechanical polishing. Further, the valency state of the arsenic species determines the toxicity of effluent. Waste slurries from three sources were studied by ICP-MS and ICP-OES analysis to determine the amount of arsenic in the supernate and the form of the arsenic species. This data was related to mechanical lapping processes, such as the size distribution of particles in the slurry, and to the oxidation chemistry of the polishing processes. The analytical results provide guidance as to the most effective strategy to minimize the environmental impact of slurries produced during wafer thinning and polishing.<br/>