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Enzenhofer, Tobias
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article
Tailoring the transport properties of YBa2Cu3O7-δ thin films by light-ion irradiation
Abstract
Irradiation with light ions allows for a post-processing of high-temperature superconductor thin films to tailor the electrical transport properties to specific requirements. We present a systematic investigation on the evolution of the resistivity and the Hall angle of 100nm-thick YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7−δ</sub> films for cumulative irradiation with He<sup>+</sup> ions. The irradiation induces point defects, primarily by displacing oxygen atoms, that result in a systematic decrease of the critical temperature and finally in a transition into a semiconducting state. The temperature dependencies and the offset at <em>T</em> = 0 K of the resistivity and the inverse Hall angle both indicate enhanced carrier scattering at defects but only a small reduction of the concentration of itinerant carriers. The carrier mobility inferred from the Hall angle is systematically reduced with the irradiation dose.