| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kumar, Ramesh
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (8/8 displayed)
- 2024Controlling Electronic-Ionic Kinetics via Size Engineering in CsPbBr3 Perovskite Nanocrystals
- 2022Experimental and RSM-Based Process-Parameters Optimisation for Turning Operation of EN36B Steelcitations
- 2020Unraveling the antisolvent dripping delay effect on the Stranski-Krastanov growth of CH3NH3PbBr3 thin films: a facile route for preparing a textured morphology with improved optoelectronic properties.
- 2020Unraveling the antisolvent dripping delay effect on the Stranski-Krastanov growth of CH<sub>3</sub>NH<sub>3</sub>PbBr<sub>3</sub> thin films: a facile route for preparing a textured morphology with improved optoelectronic propertiescitations
- 2019Sustainable and Affordable Composites Built Using Microstructures Performing Better than Nanostructures for Arsenic Removalcitations
- 2018Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
- 2018Effect of Eccentric Field-shaper on Electromagnetic Crimping of Terminal Wire Interconnections
- 2014Demonstration of advanced APBS solvent at TNO's CO2 capture pilot plantcitations
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article
Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD
Abstract
We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metalorganic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.