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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Thelander, Kimberly Dick
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2015Electrical and Surface Properties of InAs/InSb Nanowires Cleaned by Atomic Hydrogencitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2011Crystal structure control in Au-free self-seeded InSb wire growth.citations
- 2008Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical Modification.citations
- 2007Directed growth of branched nanowire structures
- 2007Targeted deposition of Au aerosol nanoparticles on vertical nanowires for the creation of nanotreescitations
- 2006Crystal structure of branched epitaxial III-V nanotreescitations
- 2005A new understanding of au-assisted growth of III-V semiconductor nanowirescitations
- 2005Role of the Au/III-V interaction in the Au-assisted growth of III-V branched nanostructurescitations
- 2004Growth of GaP nanotree structures by sequential seeding of 1D nanowirescitations
Places of action
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article
Directed growth of branched nanowire structures
Abstract
We describe the production of hierarchical branched nanowire structures by the sequential seeding of multiple wire generations with metal nanoparticles. Such complex structures represent the next step in the study of functional nanowires, as they increase the potential functionality of nanostructures produced in a self-assembled way. It is possible, for example, to fabricate a variety of active heterostructure segments with different compositions and diameters within a single connected structure. The focus of this work is on epitaxial III-V semiconductor branched nanowire structures, with the two materials GaP and InAs used as typical examples of branched structures with cubic (zinc blende) and hexagonal (wurtzite) crystal structures. The general morphology of these structures will be described, as well as the relationship between morphology and crystal structure.