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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kirkby, Karen Reeson
University of Manchester
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (20/20 displayed)
- 2013Chemical changes exhibited by latent fingerprints after exposure to vacuum conditions.citations
- 2013Integrated Ion Beam Analysis (IBA) in Gunshot Residue (GSR) characterisationcitations
- 2012Determination of the deposition order of overlapping latent fingerprints and inks using secondary ion mass spectrometry.citations
- 2010Deactivation of submelt laser annealed arsenic ultrashallow junctions in silicon during subsequent thermal treatmentcitations
- 2009Heavy ion implantation combined with grazing incidence X-ray absorption spectroscopy (GIXAS)
- 2009Trace element profiling of gunshot residues by PIXE and SEM-EDScitations
- 2009Characterization of junction activation and deactivation using non-equilibrium annealing
- 2008RBS/EBS/PIXE measurement of single-walled carbon nanotube modification by nitric acid purification treatmentcitations
- 2006Deactivation of B and BF2 profiles after non-melt laser annealing
- 2006Effect of buried Si SiO2 interface on dopant and defect evolution in preamorphizing implant ultrashallow junctioncitations
- 2006Deactivation of low energy boron implants into pre-amorphised Si after non-melt laser annealing with multiple scans
- 2006Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scanscitations
- 2005Evaluation of BBr2 + and B+ + Br + implants in silicon
- 2005Understanding the role of buried Si/SiO2 interface on dopant and defect evolution in PAI USJcitations
- 2005A potential integrated low temperature approach for superconducting MgB2 thin film growth and electronics device fabrication by ion implantationcitations
- 2005Comparison of elemental boron and boron halide implants into siliconcitations
- 2002Effect of implant conditions on the optical and structural properties of β-FeSi2
- 2001Microstructure of (100) silicon wafer implanted by 1 MeV Ru+ ionscitations
- 2001Electroluminescence of β-FeSi2 light emitting devices
- 2000Light-emitting diodes fabricated in silicon/iron disilicide
Places of action
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document
Heavy ion implantation combined with grazing incidence X-ray absorption spectroscopy (GIXAS)
Abstract
<p>An understanding of the effect of cumulative radiation damage on the integrity of ceramic wasteforms for plutonium and minor actinide disposition is key to the scientific case for safe disposal. Alpha recoil due to the decay of actinide species leads to the amorphisation of the initially crystalline host matrix, with potentially deleterious consequences such as macroscopic volume swelling and reduced resistance to aqueous dissolution. For the purpose of laboratory studies the effect of radiation damage can be simulated by various accelerated methodologies. The incorporation of short-lived actinide isotopes accurately reproduces damage arising from both alpha-particle and the heavy recoil nucleus, but requires access to specialist facilities. In contrast, fast ion implantation of inactive model ceramics effectively simulates the heavy recoil nucleus, leading to amorphisation of the host crystal lattice over very short time-scales. Although the resulting materials are easily handled, quantitative analysis of the resulting damaged surface layer has proved challenging. In this investigation, we have developed an experimental methodology for characterisation of radiation damaged structures in candidate ceramics for actinide disposition. Our approach involves implantation of bulk ceramic samples with 2 MeV Kr<sup>+</sup> ions, to simulate heavy atom recoil; combined with grazing incidence X-ray absorption spectroscopy (GI-XAS) to characterise only the damaged surface layer. Here we present experimental GI-XAS data acquired at the Ti and Zr K-edges of ion implanted zirconolite, as a function of grazing angle, demonstrating that this technique can be successfully applied to characterise only the amorphised surface layer. Comparison of our findings with data from metamict natural analogues provide evidence that heavy ion implantation reproduces the amorphous structure arising from naturally accumulated radiation damage.</p>