| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Vopson, Melvin Marian
University of Portsmouth
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (10/10 displayed)
- 2020Diamagnetic coupling for magnetic tuning in nano-thin filmscitations
- 2019Sub-lattice polarization states in anti-ferroelectrics and their relaxation processcitations
- 2019Evidence of substrate roughness surface induced magnetic anisotropy in Ni80Fe20 flexible thin filmscitations
- 20171D core-shell magnetoelectric nanocomposites by template-assisted liquid phase depositioncitations
- 2012Probing the local strain-mediated magnetoelectric coupling in multiferroic nanocomposites by magnetic field-assisted piezoresponse force microscopycitations
- 2012Nanostructured p-n junctions for kinetic-to-electrical energy conversioncitations
- 2005Preparation of high moment CoFe films with controlled grain size and coercivitycitations
- 2005Deposition of polycrystalline thin films with controlled grain sizecitations
- 2005Grain size effects in metallic thin films prepared using a new sputtering technology
- 2004Novel sputtering technology for grain-size controlcitations
Places of action
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article
Grain size effects in metallic thin films prepared using a new sputtering technology
Abstract
In this paper we show how the grain size of metallic sputtered films can be controlled using a novel sputtering technology (HiTUS). This is evidenced by TEM and grain size analysis, which show changes of up to a factor 10in the mean grain diameter of CoFe thin films. We achieved the grain size control by tuning the target bias voltage, which had the effect of changing the energy of the Ar ions. This is due to the unique design of the HiTUS sputtering plant in which the plasma generation is decoupled from the sputtering chamber and the bias voltage is not required to sustain a plasma glow discharge. Grain size control has been applied to a series of polycrystalline 20 nm thick CoFe films and a series of applications arising form the ability to control the grain size are presented. In particular, we show that the coercivity, resistivity and exchange bias field have a strong dependence on the mean grain size.