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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Zeimpekis, Ioannis
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (24/24 displayed)
- 2023Large-area synthesis of high electrical performance MoS2 by a commercially scalable atomic layer deposition processcitations
- 2023Expanding the transmission window of visible-MWIR chalcogenide glasses by silicon nitride doping
- 2023Large-area synthesis of high electrical performance MoS 2 by a commercially scalable atomic layer deposition processcitations
- 2023Large-area synthesis of high electrical performance MoS 2 by a commercially scalable atomic layer deposition processcitations
- 2022Room temperature phase transition of W-doped VO 2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2022Room temperature phase transition of W-doped VO2 by atomic layer deposition on 200 mm Si wafers and flexible substratescitations
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019Mechanochromic reconfigurable metasurfacescitations
- 2019Mechanochromic reconfigurable metasurfacescitations
- 2019Tuning MoS2 metamaterial with elastic strain
- 2019Tuning MoS 2 metamaterial with elastic strain
- 2019High-throughput physical vapour deposition flexible thermoelectric generatorscitations
- 2018Fabrication of micro-scale fracture specimens for nuclear applications by direct laser writing
- 2017Wafer scale pre-patterned ALD MoS 2 FETs
- 2017Wafer scale spatially selective transfer of 2D materials and heterostructures
- 2017Wafer scale spatially selective transfer of 2D materials and heterostructures
- 2017Structural modification of Ga-La-S glass for a new family of chalcogenidescitations
- 2017Wafer scale pre-patterned ALD MoS2 FETs
- 2017Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
- 2017Tuneable sputtered films by doping for wearable and flexible thermoelectrics
- 2017A lift-off method for wafer scale hetero-structuring of 2D materials
Places of action
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document
Wafer scale spatially selective transfer of 2D materials and heterostructures
Abstract
The boom in interest in two dimensional materials has led to intense research, increasingly towards the commercialization of this family of materials. Results to date have proved the viability of wafer scale production of 2D materials, nevertheless no technique for controllable large scale 2D heterostructures, which would seamlessly integrate with existing fabrication lines, has been presented. This is however essential for the production of wafer scale photodiodes, pn-diodes, diode logic gates, and other emerging devices.<br/>There are currently two main approaches for creating heterostructures, i) the sequentially epitaxial growth of 2D materials that results in random spatial growth, rendering this approach non-viable for commercial applications [1] and ii) the mechanical assembly technique, where a 2D flake is transferred and aligned to another flake to form just one heterostructure [2].<br/>Here we report a novel method that can achieve wafer scale fabrication of 2D material-based devices. The method is using a lift-off technique for the micro-patterning of TMDCs and graphene layers that are combined to form heterostructures. The low thermal budget of this process makes this method substrate-agnostic hence suitable for fabrication of devices on temperature sensitive materials such as polymers.<br/>The method uses Atomic Layer Deposition (ALD)-grown metal oxides converted by annealing protocols to 2D TMDCs and copper foil CVD - grown graphene as starting materials. The films are transferred to substrates covered with a pre-patterned photoresist layer. Lift off of the photoresist allows the spatially controllable transfer of the 2D materials allowing for sequential steps to produce aligned heterostructures over large areas.<br/>An overview of the process flow will be presented alongside with a examples of 2D heterostructures such as MoS<sub>2</sub> field effect transistors, using graphene source and drain contacts. The deposited microstructures are characterized and furthermore analyzed via Raman mapping, SEM, AFM and XPS measurements.<br/><br/>[1] W. S. Mos, Y. Gong, J. Lin, X. Wang, G. Shi, S. Lei, Z. Lin, X. Zou,G. Ye, R. Vajtai, B. I. Yakobson, H. Terrones, M. Terrones, K. Tay, J.Lou, S. T. Pantelides, Z. Liu, W. Zhou, and P. M. Ajayan, “Vertical andin-plane heterostructures from WS<sub>2</sub>/MoS<sub>2</sub> monolayers,” vol. 13, no. September, p. 8, 2014.<br/>[2]W. J. Yu, Z. Li, H. Zhou, Y. Chen, Y. Wang, Y. Huang, and X. Duan,“Vertically stacked multi-heterostructures of layered materials forlogic transistors and complementary inverters.,” <i>Nat. Mater.</i>, vol. 12, no. 3, pp. 246–52, 2013