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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Deppert, Knut
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (41/41 displayed)
- 2023Insights into the Synthesis Mechanisms of Ag-Cu3P-GaP Multicomponent Nanoparticlescitations
- 2021Dynamic Processes in Metal-Semiconductor Nanoparticle Heterostructures
- 2021Sintering Mechanism of Core@Shell Metal@Metal-Oxide Nanoparticlescitations
- 2021Aerotaxycitations
- 2021Synthesis and characterization of Au@Zn core@shell aerosol nanoparticles generated by spark ablation and on-line PVD
- 2020Pseudo-particle continuum modelling of nanowire growth in aerotaxy
- 2020Complex Aerosol Nanostructures: Revealing the Phases from Multivariate Analysis on Elemental Maps Obtained by TEM-EDX
- 2018N-type doping and morphology of GaAs nanowires in Aerotaxycitations
- 2017From plasma to nanoparticlescitations
- 2016GaAsP Nanowires Grown by Aerotaxycitations
- 2016Length Distributions of Nanowires Growing by Surface Diffusioncitations
- 2015In-situ characterization of metal nanoparticles and their organic coatings using laser-vaporization aerosol mass spectrometrycitations
- 2015Surface morphology of Au-free grown nanowires after native oxide removal.citations
- 2013Geometric model for metalorganic vapour phase epitaxy of dense nanowire arrayscitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2012High crystal quality wurtzite-zinc blende heterostructures in metal-organic vapor phase epitaxy-grown GaAs nanowirescitations
- 2011Dynamics of extremely anisotropic etching of InP nanowires by HClcitations
- 2011Crystal structure control in Au-free self-seeded InSb wire growth.citations
- 2011Crystal structure control in Au-free self-seeded InSb wire growth.citations
- 2011Oxidation and reduction of Pd(100) and aerosol-deposited Pd nanoparticlescitations
- 2010High Performance Single Nanowire Tunnel Diodes
- 2010Control of III-V nanowire crystal structure by growth parameter tuningcitations
- 2009Effects of Supersaturation on the Crystal Structure of Gold Seeded III-V Nanowirescitations
- 2008Effects of growth conditions on the crystal structure of gold-seeded GaP nanowirescitations
- 2008Control of GaP and GaAs Nanowire Morphology through Particle and Substrate Chemical Modification.citations
- 2008High Quality InAs/InSb nanowire heterostructrues grown by metalorganic vapour phase epitaxycitations
- 2007Directed growth of branched nanowire structures
- 2007Targeted deposition of Au aerosol nanoparticles on vertical nanowires for the creation of nanotreescitations
- 2006Growth and characterization of defect free GaAs nanowirescitations
- 2006Crystal structure of branched epitaxial III-V nanotreescitations
- 2005A new understanding of au-assisted growth of III-V semiconductor nanowirescitations
- 2005Role of the Au/III-V interaction in the Au-assisted growth of III-V branched nanostructurescitations
- 2004Growth of GaP nanotree structures by sequential seeding of 1D nanowirescitations
- 2004Size- and shape-controlled GaAs nano-whiskers grown by MOVPE: a growth studycitations
- 2003Deposition of aerosol nanoparticles on flat substrate surfacescitations
- 2002One-dimensional heterostructures in semiconductor nanowhiskerscitations
- 2002Approaches to increasing yield in evaporation/condensation nanoparticle generationcitations
- 2002One-dimensional steeplechase for electrons realizedcitations
- 2002Heterointerfaces in III-V semiconductor nanowhiskers
- 2002Size- and composition controlled Au-In nanoalloy aerosol particles
- 2000Single-crystalline tungsten nanoparticles produced by thermal decomposition of tungsten hexacarbonylcitations
Places of action
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document
High Performance Single Nanowire Tunnel Diodes
Abstract
Semiconductor nanowires (NWs) have emerged as a promising technology for future electronic and optoelectronic devices. Epitaxial growth of III-V materials on Si substrates have been demonstrated, allowing for low-cost production. As the lattice matching requirements are much less strict than for planar growth, many new materials combinations can be grown in a single NW. This opens up exciting opportunities for NW-based high-performance solar cells, where previously inaccessible materials combinations can now be chosen to match the solar spectrum. A key component of a multi-junction solar cell is the tunnel (Esaki) diode, which provides a low-resistance connection between junctions. We demonstrate an InP-GaAs NW axial heterostructure with tunnel diode behavior. InP and GaAs can be readily n- and p-doped, respectively, and the heterointerface is expected to have an advantageous type II band alignment. We intend to exploit this structure for the InAsP-GaAsP materials system, which is tunable in bandgaps from 0.4 eV to 1.9 eV. The NWs were grown using the Vapor-Liquid-Solid (VLS) technique in MOCVD, using H2S for n-doping of InP and DEZn for p-doping of GaAs. For electrical evaluation, individual NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6.