| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Wallentin, Jesper
Lund University
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (22/22 displayed)
- 2024Structural and chemical properties of anion exchanged CsPb(Br<sub>(1−x)</sub>Cl<sub> x </sub>)<sub>3</sub> heterostructured perovskite nanowires imaged by nanofocused x-rayscitations
- 2024Oxygen-defective electrostrictors for soft electromechanicscitations
- 2024Oxygen-defective electrostrictors for soft electromechanicscitations
- 2024Ferroelectricity in Ultrathin HfO2-Based Films by Nanosecond Laser Annealingcitations
- 2023Beyond ray optics absorption of light in CsPbBr 3 perovskite nanowire arrays studied experimentally and with wave optics modellingcitations
- 2023Beyond ray optics absorption of light in CsPbBr3perovskite nanowire arrays studied experimentally and with wave optics modellingcitations
- 2022Perovskite-Compatible Electron-Beam-Lithography Process Based on Nonpolar Solvents for Single-Nanowire Devicescitations
- 2022Optical demonstration of crystallography and reciprocal space using laser diffraction from Au microdisc arrayscitations
- 2022In situ imaging of temperature-dependent fast and reversible nanoscale domain switching in a single-crystal perovskitecitations
- 2022Single-Crystalline Perovskite Nanowire Arrays for Stable X-ray Scintillators with Micrometer Spatial Resolutioncitations
- 2022Free-Standing Metal Halide Perovskite Nanowire Arrays with Blue-Green Heterostructurescitations
- 2021Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopycitations
- 2021Inducing ferroelastic domains in single-crystal CsPbBr3 perovskite nanowires using atomic force microscopycitations
- 2021Vertically Aligned CsPbBr3 Nanowire Arrays with Template-Induced Crystal Phase Transition and Stabilitycitations
- 2020In Situ Imaging of Ferroelastic Domain Dynamics in CsPbBr3Perovskite Nanowires by Nanofocused Scanning X-ray Diffractioncitations
- 2020In situ imaging of ferroelastic domain dynamics in CsPbBr3perovskite nanowires by nanofocused scanning X-ray diffractioncitations
- 2017Simulated sample heating from a nanofocused X-ray beamcitations
- 2015Simultaneous high-resolution scanning Bragg contrast and ptychographic imaging of a single solar cell nanowirecitations
- 2013Transparently Wrap-Gated Semiconductor Nanowire Arrays For Studies Of Gate-Controlled Photoluminescencecitations
- 2011Dynamics of extremely anisotropic etching of InP nanowires by HClcitations
- 2011Doping profile of InP nanowires directly imaged by photoemission electron microscopycitations
- 2010High Performance Single Nanowire Tunnel Diodes
Places of action
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document
High Performance Single Nanowire Tunnel Diodes
Abstract
Semiconductor nanowires (NWs) have emerged as a promising technology for future electronic and optoelectronic devices. Epitaxial growth of III-V materials on Si substrates have been demonstrated, allowing for low-cost production. As the lattice matching requirements are much less strict than for planar growth, many new materials combinations can be grown in a single NW. This opens up exciting opportunities for NW-based high-performance solar cells, where previously inaccessible materials combinations can now be chosen to match the solar spectrum. A key component of a multi-junction solar cell is the tunnel (Esaki) diode, which provides a low-resistance connection between junctions. We demonstrate an InP-GaAs NW axial heterostructure with tunnel diode behavior. InP and GaAs can be readily n- and p-doped, respectively, and the heterointerface is expected to have an advantageous type II band alignment. We intend to exploit this structure for the InAsP-GaAsP materials system, which is tunable in bandgaps from 0.4 eV to 1.9 eV. The NWs were grown using the Vapor-Liquid-Solid (VLS) technique in MOCVD, using H2S for n-doping of InP and DEZn for p-doping of GaAs. For electrical evaluation, individual NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6.