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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Niu, G.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (6/6 displayed)
- 2020Oxygen octahedral tilt ordering in (Na1/2Bi1/2)TiO3 ferroelectric thin filmscitations
- 2017Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching propertiescitations
- 2017Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties
- 2017Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties
- 2016Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)citations
- 2012Chemistry and Atomic Distortion at the Surface of an Epitaxial BaTiO3 Thin Film after Dissociative Adsorption of Watercitations
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article
Electron holography on HfO2/HfO2−x bilayer structures with multilevel resistive switching properties
Abstract
Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico–chemical properties of oxygen-deficient amorphous HfO2−x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2−x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2−x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.