Materials Map

Discover the materials research landscape. Find experts, partners, networks.

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The Materials Map is an open tool for improving networking and interdisciplinary exchange within materials research. It enables cross-database search for cooperation and network partners and discovering of the research landscape.

The dashboard provides detailed information about the selected scientist, e.g. publications. The dashboard can be filtered and shows the relationship to co-authors in different diagrams. In addition, a link is provided to find contact information.

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The Materials Map is still under development. In its current state, it is only based on one single data source and, thus, incomplete and contains duplicates. We are working on incorporating new open data sources like ORCID to improve the quality and the timeliness of our data. We will update Materials Map as soon as possible and kindly ask for your patience.

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University of Southampton

in Cooperation with on an Cooperation-Score of 37%

Topics

Publications (14/14 displayed)

  • 2023Expanding the transmission window of visible-MWIR chalcogenide glasses by silicon nitride dopingcitations
  • 2023Conformal CVD-grown MoS2 on three-dimensional woodpile photonic crystals for photonic bandgap engineering4citations
  • 2022Low energy switching of phase change materials using a 2D thermal boundary layer11citations
  • 2021Manufacturing of GLS-Se glass rods and structured preforms by extrusion for optical fiber drawing for the IR region2citations
  • 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)citations
  • 2019High-throughput physical vapour deposition flexible thermoelectric generators41citations
  • 2018Fabrication of micro-scale fracture specimens for nuclear applications by direct laser writingcitations
  • 2017Structural modification of Ga-La-S glass for a new family of chalcogenides2citations
  • 2017Wafer scale pre-patterned ALD MoS2 FETscitations
  • 2017Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenidescitations
  • 2017Selection by current compliance of negative and positive bipolar resistive switching behaviour in ZrO2−x/ZrO2 bilayer memory22citations
  • 2016Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition30citations
  • 2016Advanced CVD technology for emerging transition metal di-chalcogenidescitations
  • 2014The effect of atomic layer deposition temperature on switching properties of HfOx resistive RAM devices7citations

Places of action

Chart of shared publication
Craig, Christopher
6 / 37 shared
Xu, Dichu
1 / 7 shared
Archer, Ellis
1 / 1 shared
Zeimpekis, Ioannis
8 / 24 shared
Huang, Chung-Che
7 / 38 shared
Chen, Lifeng
1 / 2 shared
Taverne, Mike P. C.
2 / 2 shared
Hewak, Daniel W.
9 / 80 shared
Chen, Yu-Shao Jacky
1 / 1 shared
Rarity, John G.
1 / 1 shared
Awachi, Habib
1 / 1 shared
Rezaie, Daniel
1 / 1 shared
Palakkool, Nadira Meethale
1 / 1 shared
Zheng, Xu
1 / 3 shared
Ho, Y.-L. Daniel
1 / 1 shared
Wang, Yunzheng
1 / 2 shared
Simpson, Robert E.
1 / 6 shared
Teo, Siew Lang
1 / 2 shared
Ning, Jing
1 / 5 shared
Bosman, Michel
1 / 6 shared
Teo, Ting Yu
1 / 2 shared
Guzman, Fernando
2 / 5 shared
Ravagli, Andrea
4 / 19 shared
Moog, Bruno Jean
1 / 4 shared
Adam, Henry Lewis
1 / 1 shared
Feng, Zhuo
2 / 4 shared
Weatherby, Edwin
1 / 4 shared
Ghadah, Abdulrahman Alzaidy
1 / 2 shared
Bruno, Jean Moog
1 / 2 shared
Aspiotis, Nikolaos
4 / 18 shared
Delaney, Matthew
1 / 2 shared
Tang, Tian
1 / 2 shared
Barker, Clara
1 / 2 shared
Yarmolich, Dmitry
1 / 1 shared
Assender, Hazel
1 / 1 shared
Yao, Jin
1 / 5 shared
Zeng, Xu
1 / 1 shared
Mostafavi, Mahmoud
1 / 58 shared
Ho, Ying-Lung Daniel
1 / 1 shared
Shterenlikht, Anton
1 / 23 shared
Aghajani, Armen
1 / 2 shared
Weatherby, Ed
3 / 6 shared
Alzaidy, Ghadah
2 / 3 shared
Cui, Qingsong
2 / 2 shared
Yan, Xingzhao
1 / 1 shared
Huang, Ruomeng
3 / 25 shared
De Groot, Cornelis
3 / 41 shared
Charlton, Martin D. B.
1 / 7 shared
Sun, Sun Kai
1 / 1 shared
Kiang, Kian
1 / 1 shared
Chart of publication period
2023
2022
2021
2019
2018
2017
2016
2014

Co-Authors (by relevance)

  • Craig, Christopher
  • Xu, Dichu
  • Archer, Ellis
  • Zeimpekis, Ioannis
  • Huang, Chung-Che
  • Chen, Lifeng
  • Taverne, Mike P. C.
  • Hewak, Daniel W.
  • Chen, Yu-Shao Jacky
  • Rarity, John G.
  • Awachi, Habib
  • Rezaie, Daniel
  • Palakkool, Nadira Meethale
  • Zheng, Xu
  • Ho, Y.-L. Daniel
  • Wang, Yunzheng
  • Simpson, Robert E.
  • Teo, Siew Lang
  • Ning, Jing
  • Bosman, Michel
  • Teo, Ting Yu
  • Guzman, Fernando
  • Ravagli, Andrea
  • Moog, Bruno Jean
  • Adam, Henry Lewis
  • Feng, Zhuo
  • Weatherby, Edwin
  • Ghadah, Abdulrahman Alzaidy
  • Bruno, Jean Moog
  • Aspiotis, Nikolaos
  • Delaney, Matthew
  • Tang, Tian
  • Barker, Clara
  • Yarmolich, Dmitry
  • Assender, Hazel
  • Yao, Jin
  • Zeng, Xu
  • Mostafavi, Mahmoud
  • Ho, Ying-Lung Daniel
  • Shterenlikht, Anton
  • Aghajani, Armen
  • Weatherby, Ed
  • Alzaidy, Ghadah
  • Cui, Qingsong
  • Yan, Xingzhao
  • Huang, Ruomeng
  • De Groot, Cornelis
  • Charlton, Martin D. B.
  • Sun, Sun Kai
  • Kiang, Kian
OrganizationsLocationPeople

document

Wafer scale pre-patterned ALD MoS2 FETs

  • Huang, Chung-Che
  • Morgan, Katrina Anne
  • Hewak, Daniel W.
  • Zeimpekis, Ioannis
  • Aspiotis, Nikolaos
Abstract

Currently, 2D Transition metal dichalcogenides are emerging as the next generation semiconductor materials as they offer a direct bangap and therefore high on/off ratios, relatively high mobility, short-channel effects immunity, and near ideal subthreshold swings.<br/>In this work we present a simplified wafer scale processing of MoS2 transistors that alleviates lithography and etching issues. The first step of the process is to grow a 90 nm dry thermal oxide on 6 inch wafers. The wafers are then immersed in a HCl solution to ensure the hydrophilicity of the surface. Atomic layer deposition (ALD) is used to grow MoO3 on the wafer. For this we use the metal organic precursor Bis(tert-butylimido)bis(dimethylamido)Mo and Ozone at 250 C. The wafers are then patterned in a conventional lithography process using the positive tone resist S1813. After the resist development the wafers are rinsed in deionised water and washed thoroughly. This step not only removes the remaining developer but also etches away the exposed MoO3. The photoresist is then removed by Acetone and finally rinsed with IPA. The wafers are further cleaned and oxidised in an asher by O2 plasma.<br/>The patterned MoO3 wafers are then transferred in a furnace where they are annealed in H2S in two steps and at a low pressure. The first step is at substantially lower temperature than the melting point of MoO3 at 250C to eliminate vaporization of the material and for 1h whereas the second step is at 900C for 10 minutes to improve the crystallinity of the material. The pressure during the annealing is set at 4 Torr. After the H2S treatment the films are converted to MoS2 and since they are pre - patterned they are ready for metal deposition.<br/>For metal contacts we use sputtering of 5nm of Ti and 150 nm of Au on top. For the top gate dielectric we use 40nm ALD deposited HfO2 which is deposited at the entire wafer. After the deposition of the top dielectric we open metal window contacts to the metal pads of the transistors using traditional lithography and a 20:1 BHF solution. Finally, top metal gate is deposited by sputtering and patterned by lift-off.<br/>The novelty of this process lies within the pattern formation on MoO3 early in the process. This eliminates the issues involved with cross-linking of photoresist during MoS2 etching therefore simplifying and de-risking photoresist removal and reducing contamination. More importantly though as the patterns have already been formed before the high temperature conversion to MoS2 the layer stress has been released prior to the conversion. This results in higher quality films, free of pin holes, with fewer defects and of higher crystallinity, yielding superior electrical properties.<br/>Devices are currently at the electrical characterisation stage from which results will reveal the performance of the MoS2 FETs made by this method. Ultimate goal of this work is to create a robust wafer scale process with high quality transistors for biosensing applications.

Topics
  • impedance spectroscopy
  • surface
  • mobility
  • semiconductor
  • etching
  • defect
  • annealing
  • crystallinity
  • field-effect transistor method
  • lithography
  • atomic layer deposition