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Naji, M. |
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Motta, Antonella |
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Aletan, Dirar |
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Mohamed, Tarek |
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Ertürk, Emre |
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Taccardi, Nicola |
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Kononenko, Denys |
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Petrov, R. H. | Madrid |
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Alshaaer, Mazen | Brussels |
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Bih, L. |
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Casati, R. |
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Muller, Hermance |
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Kočí, Jan | Prague |
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Šuljagić, Marija |
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Kalteremidou, Kalliopi-Artemi | Brussels |
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Azam, Siraj |
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Ospanova, Alyiya |
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Blanpain, Bart |
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Ali, M. A. |
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Popa, V. |
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Rančić, M. |
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Ollier, Nadège |
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Azevedo, Nuno Monteiro |
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Landes, Michael |
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Rignanese, Gian-Marco |
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Kirmani, Ahmad
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (7/7 displayed)
- 2017Programmable and coherent crystallization of semiconductors.citations
- 2017Hybrid tandem quantum dot/organic photovoltaic cells with complementary near infrared absorptioncitations
- 2017Molecular Doping of the Hole-Transporting Layer for Efficient, Single-Step-Deposited Colloidal Quantum Dot Photovoltaics
- 2016Surface Restructuring of Hybrid Perovskite Crystalscitations
- 2016Remote Molecular Doping of Colloidal Quantum Dot Photovoltaicscitations
- 2016Ligand-Stabilized Reduced-Dimensionality Perovskitescitations
- 2015Solution-printed organic semiconductor blends exhibiting transport properties on par with single crystalscitations
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article
Molecular Doping of the Hole-Transporting Layer for Efficient, Single-Step-Deposited Colloidal Quantum Dot Photovoltaics
Abstract
Employment of thin perovskite shells and metal halides as surface-passivants for colloidal quantum dots (CQDs) has been an important, recent development in CQD optoelectronics. These have opened the route to single-step-deposited high-performing CQD solar cells. These promising architectures employ a CQD hole-transporting layer (HTL) whose intrinsically shallow Fermi level (EF) restricts band-bending at maximum power-point during solar cell operation limiting charge collection. Here, we demonstrate a generalized approach to effectively balance band-edge energy levels of the main CQD absorber and charge-transport layer for these high-performance solar cells. Briefly soaking the CQD HTL in a solution of the metal–organic p-dopant, molybdenum tris(1-(trifluoroacetyl)-2-(trifluoromethyl)ethane-1,2-dithiolene), effectively deepens its Fermi level, resulting in enhanced band bending at the HTL:absorber junction. This blocks the back-flow of photogenerated electrons, leading to enhanced photocurrent and fill factor compared to those of undoped devices. We demonstrate 9.0% perovskite-shelled and 9.5% metal-halide-passivated CQD solar cells, both achieving ca. 10% relative enhancements over undoped baselines.