| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Healy, Noel
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2018Wavelength conversion and supercontinuum generation in silicon optical fiberscitations
- 2018Optical-resonance-enhanced nonlinearities in a MoS2-coated single-mode fibercitations
- 2017Laser annealing of low temperature deposited silicon waveguidescitations
- 2016Laser recrystallization and inscription of compositional microstructures in crystalline SiGe-core fibrescitations
- 2016Optical fiber poling by induction: analysis by 2D numerical modelingcitations
- 2015A silicon/lithium niobate hybrid photonic material platform produced by laser processing
- 2014Silicon-based photonic integration beyond the telecommunication wavelength rangecitations
- 2014Extreme electronic bandgap modification in laser-crystallized silicon optical fibrescitations
- 2014Mid-IR heterogeneous silicon photonicscitations
- 2012Conformal coating by high pressure chemical deposition for patterned microwires of II-VI semiconductorscitations
- 2012Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibrescitations
- 2011Zinc selenide optical fiberscitations
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document
A silicon/lithium niobate hybrid photonic material platform produced by laser processing
Abstract
Silicon (Si) and lithium niobate (LiNbO<sub>3</sub>) are two materials that are synonymous with the electronics and photonics industries respectively and are supported by a significant amount of technological know-how. It has been suggested and demonstrated recently that Si could also be used for the production of integrated photonic devices, however its performance can be limited by the transmission cutoff at short wavelengths, a relatively high two-photon absorption, and a zero second order nonlinear optical susceptibility. LiNbO<sub>3</sub> on the other hand is a very good dielectric material with very little electronic functionality and high second order nonlinearity. Thus, as these two materials have complementary properties, there is significant merit in combining them into a single hybrid system that will benefit from the properties of its constituents, as demonstrated via direct bonding in [1]. Here we propose a route for producing such a hybrid material system via local laser processing of a low cost, easy to produce amorphous silicon (a-Si) film deposited onto a single crystal LiNbO<sub>3</sub> substrate. This research is based on recent encouraging results of a laser based crystallization process obtained in a-Si core optical fibres that not only produced crystallites with very large aspect ratios, but also allowed for tuning of the Si bandgap [2].<br/>The emphasis of this laser-processing route has been on achieving structures with large crystals and low surface roughness in order to obtain good photonic and electronic device performance. Interestingly it was revealed that, apart from the expected local crystallization of the a-Si film, this particular system exhibited a plethora of interesting and potentially useful effects including the direct formation of optical waveguides in LiNbO<sub>3</sub>, enabled ferroelectric domain reversal and the spontaneous formation of periodic structural features on the Si film, shown in the figure below.