| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Mannan, Samjid Hassan
King's College London
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (29/29 displayed)
- 2020High bond strength Cu joints fabricated by rapid and pressureless in situ reduction-sintering of Cu nanoparticlescitations
- 2019Influence of Zn concentration on interfacial intermetallics during liquid and solid state reaction of hypo and hypereutectic Sn-Zn solder alloyscitations
- 2019Arresting High-Temperature Microstructural Evolution inside Sintered Silvercitations
- 2017Review of silver nanoparticle based die attach materials for high power/temperature applicationscitations
- 2016Microstructural evolution of sintered silver at elevated temperaturescitations
- 2016Reactions in electrodeposited Cu/Sn and Cu/Ni/Sn nanoscale multilayers for interconnectscitations
- 2016Thermally stable high temperature die attach solutioncitations
- 2015Electromigration Phenomena in Sintered Nanoparticle Ag Systems Under High Current Density
- 2015Factors influencing microstructural evolution in nanoparticle sintered Ag die attachcitations
- 2014A review: On the development of low melting temperature Pb-free solderscitations
- 2013Electronics Assembly and High Temperature Reliability Using Sn-3.8Ag-0.7Cu Solder Paste With Zn Additivescitations
- 2012Disabling of Nanoparticle Effects at Increased Temperature in Nanocomposite Solderscitations
- 2012Massive spalling of Cu-Zn and Cu-Al intermetallic compounds at the interface between solders and Cu substrate during liquid state reactioncitations
- 2012Intermetallic compound growth suppression at high temperature in SAC solders with Zn addition on Cu and Ni-P substratescitations
- 2010Reactions of Sn-3.5Ag-Based Solders Containing Zn and Al Additions on Cu and Ni(P) Substrates citations
- 2009Cross-Section Preparation for Solder Joints and MEMS Device Using Argon Ion Beam Millingcitations
- 2008Interfacial reaction between molten Sn-Bi based solders and electroless Ni-P coatings for liquid solder interconnectscitations
- 2007Dissolution and interfacial reaction of Nb in contact with the molten 521n-48Sn soldercitations
- 2007Failure mechanisms of dummy IGBT assembles constructed using liquid In-Sn/Nb system
- 2006Interfacial reactions between molten Sn-Bi-X solders and Cu substrates for liquid solder interconnectscitations
- 2006Lifetime of solid metals in contact with liquid solders for high-temperature liquid solder assembliescitations
- 2006Edge effects in intermetallic compound crystal growth between Nb and molten 52In-48Sn solder
- 2005Study of intermetallic crystal growth between Nb and molten 52In-48Sn soldercitations
- 2004Materials and processes for implementing high-temperature liquid interconnectscitations
- 2004Dissolution of solids in contact with liquid soldercitations
- 2002Electroless nickel bumping of aluminum bondpads - Part II: Electroless nickel platingcitations
- 2000Solder paste reflow modeling for flip chip assembly
- 2000Investigation of a solder bumping technique for flip-chip interconnection
- 2000Under bump metallisation of fine pitch flip-chip using electroless nickel depositioncitations
Places of action
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article
Investigation of a solder bumping technique for flip-chip interconnection
Abstract
As the demand for flip-chip products increases, the need for low cost high volume manufacturing processes also increases. Currently solder paste printing is the wafer bumping method of choice for device pitches down to 150-200 mu m. However, limitations in print quality and stencil manufacture mean that this technology is not likely to move significantly below this pitch and new methods will be required to meet the demands predicted by the technology roadmaps. This paper describes experiments conducted on carriers made from silicon for bumping of die using solder paste. An anisotropic etching process was used to generate pockets in the silicon surface into which solder paste was printed. Die were then placed against the carrier and reflowed to transfer the solder directly to the bondpads. An assessment was carried out of the potential application and limitations of this technique for device pitches at 225 and 127 mu m.