| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Huang, Chung-Che
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (38/38 displayed)
- 2023Conformal CVD-grown MoS2 on three-dimensional woodpile photonic crystals for photonic bandgap engineeringcitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2020Enhancement of nonlinear functionality of step-index silica fibers combining thermal poling and 2D materials depositioncitations
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019Mechanochromic reconfigurable metasurfacescitations
- 2019Mechanochromic reconfigurable metasurfacescitations
- 2019Tuning MoS2 metamaterial with elastic strain
- 2019Tuning MoS 2 metamaterial with elastic strain
- 2018Optical-resonance-enhanced nonlinearities in a MoS2-coated single-mode fibercitations
- 2018Fabrication of micro-scale fracture specimens for nuclear applications by direct laser writing
- 2017Wafer scale pre-patterned ALD MoS 2 FETs
- 2017Wafer scale spatially selective transfer of 2D materials and heterostructures
- 2017Wafer scale spatially selective transfer of 2D materials and heterostructures
- 2017Wafer scale pre-patterned ALD MoS2 FETs
- 2017Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
- 2017A lift-off method for wafer scale hetero-structuring of 2D materials
- 2016Next generation chalcogenide glasses for visible and IR imaging
- 2016Advanced CVD technology for emerging transition metal di-chalcogenides
- 2015Fabrication of tin sulphide and emerging transition metal di-chalcogenides by CVD
- 2015CVD-grown tin sulphide for thin film solar cell devices
- 2014Manufacturing high purity chalcogenide glass
- 2013Crystallization study of the CuSbS2 chalcogenide material for solar applications
- 2012Laser-induced crystalline optical waveguide in glass fiber formatcitations
- 2011Novel methods for the preparation of high purity chalcogenide glass for optical fiber applications
- 2010Switching metamaterials with electronic signals and electron-beam excitations
- 2010Metamaterial electro-optic switch of nanoscale thicknesscitations
- 2010Chalcogenide glasses for photonics device applications
- 2010Chalcogenide plasmonic metamaterial switches
- 2010Active chalcogenide glass photonics and electro-optics for the mid-infrared
- 2009Chalcogenide glass metamaterial optical switch
- 2009Focused ion beam etched ring-resonator in CVD-grown Ge-Sb-S thin films
- 2007Antimony germanium sulphide amorphous thin films fabricated by chemical vapour depositioncitations
- 2007Electrical phase change of Ga:La:S:Cu filmscitations
- 2005Chalcogenide glass thin films and planar waveguidescitations
- 2004Deposition and characterization of germanium sulphide glass planar waveguidescitations
- 2003Properties and application of germanium sulphide glass
- 2003Through thick and thin: recent developments with chalcogenide films
Places of action
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document
CVD-grown tin sulphide for thin film solar cell devices
Abstract
Chalcogenide materials are emerging as leading thin film photovoltaic (PV) technology. Tin mono-sulphide, a p-type semiconductor with a band gap of ~1.3 eV, has attracted great interest for the use as an absorber layer in chalcogenide thin film solar cells due to its desirable properties as an absorber layer in scalable, inexpensive, and non-toxic solar cells. In this work thin films of tin sulphide have been deposited by chemical vapour deposition (CVD) at room temperature onto soda-lime substrates then annealed at five different temperatures 200, 250, 350, 400 and 450°C with the aim of optimizing the properties of the thin films to achieve the required phase for use in solar cell device structures. These annealed CVD-grown tin sulphide thin films were further characterized with SEM, EDX, XRD, Raman and UV-VIS-NIR spectroscopy. The preliminary results of these tin sulphide thin films show great promise for PV applications.