| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Huang, Chung-Che
University of Southampton
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (38/38 displayed)
- 2023Conformal CVD-grown MoS2 on three-dimensional woodpile photonic crystals for photonic bandgap engineeringcitations
- 2022Low energy switching of phase change materials using a 2D thermal boundary layercitations
- 2020Enhancement of nonlinear functionality of step-index silica fibers combining thermal poling and 2D materials depositioncitations
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019Chalcogenide materials and applications: from bulk to 2D (Invited Talk)
- 2019Mechanochromic reconfigurable metasurfacescitations
- 2019Mechanochromic reconfigurable metasurfacescitations
- 2019Tuning MoS2 metamaterial with elastic strain
- 2019Tuning MoS 2 metamaterial with elastic strain
- 2018Optical-resonance-enhanced nonlinearities in a MoS2-coated single-mode fibercitations
- 2018Fabrication of micro-scale fracture specimens for nuclear applications by direct laser writing
- 2017Wafer scale pre-patterned ALD MoS 2 FETs
- 2017Wafer scale spatially selective transfer of 2D materials and heterostructures
- 2017Wafer scale spatially selective transfer of 2D materials and heterostructures
- 2017Wafer scale pre-patterned ALD MoS2 FETs
- 2017Chemical vapor deposition and Van der Waals epitaxy for wafer-scale emerging 2D transition metal di-chalcogenides
- 2017A lift-off method for wafer scale hetero-structuring of 2D materials
- 2016Next generation chalcogenide glasses for visible and IR imaging
- 2016Advanced CVD technology for emerging transition metal di-chalcogenides
- 2015Fabrication of tin sulphide and emerging transition metal di-chalcogenides by CVD
- 2015CVD-grown tin sulphide for thin film solar cell devices
- 2014Manufacturing high purity chalcogenide glass
- 2013Crystallization study of the CuSbS2 chalcogenide material for solar applications
- 2012Laser-induced crystalline optical waveguide in glass fiber formatcitations
- 2011Novel methods for the preparation of high purity chalcogenide glass for optical fiber applications
- 2010Switching metamaterials with electronic signals and electron-beam excitations
- 2010Metamaterial electro-optic switch of nanoscale thicknesscitations
- 2010Chalcogenide glasses for photonics device applications
- 2010Chalcogenide plasmonic metamaterial switches
- 2010Active chalcogenide glass photonics and electro-optics for the mid-infrared
- 2009Chalcogenide glass metamaterial optical switch
- 2009Focused ion beam etched ring-resonator in CVD-grown Ge-Sb-S thin films
- 2007Antimony germanium sulphide amorphous thin films fabricated by chemical vapour depositioncitations
- 2007Electrical phase change of Ga:La:S:Cu filmscitations
- 2005Chalcogenide glass thin films and planar waveguidescitations
- 2004Deposition and characterization of germanium sulphide glass planar waveguidescitations
- 2003Properties and application of germanium sulphide glass
- 2003Through thick and thin: recent developments with chalcogenide films
Places of action
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conferencepaper
Through thick and thin: recent developments with chalcogenide films
Abstract
Interest in chalcogenide materials has, over the past few years, increased significantly as glasses, crystals and alloys find new life in a wide range of devices. Many of these applications require chalcogenide films, from nanometer to millimeter thicknesses, to exploit the functionality of this family of materials. Our own research has concentrated on amorphous and crystalline chalcogenides formed with gallium and/or germanium sulphides. These glass forming groups offer an alternative to the better known arsenic-based glasses, providing lower toxicity, higher melting temperatures as well as the ability to be modified with a wide range of dopants including rare earths, transition and precious metals (e.g. silver and platinum). Crucially, we have synthesized both gallium and germanium-based glasses in an open flowing atmosphere. In doing so, the need for sealed ampoules and elemental compounding during glass synthesis is unnecessary, high purity large scale melts can thus be prepared. In particular the prominent SH- absorption band around 4 microns, a common feature in chalcogenide IR glasses, has been effectively eliminated from our gallium based glasses due to the open melting procedure.<br/>To achieve the desired thick and thin chalcogenide films, we currently exploit three deposition methods; chemical vapor deposition, inverted hot dip spin coating and pulsed laser deposition. These techniques allow for the deposition of films having thickness from several nanometers to hundreds of microns. The driving force behind our work has been the realization of planar optical waveguides for optical integrated circuits. To date, high quality films (10 - 500 microns) from the gallium-based glasses are routinely achieved with excellent uniformity and interfacial features. Single mode channel waveguide lasers with device attenuation < 0.5 dB cm-1 have been realized via direct laser writing on the surface of a gallium-based sample. In addition, buried channel waveguides as well as permanent and short-lived "dots" have also been achieved through direct laser writing. Demonstrations of the aforementioned photomodifying capabilities of our glass suggest applications on optical data storage. Some preliminary results will be presented.