| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Pomeroy, James W.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (9/9 displayed)
- 2023Heteroepitaxial growth of Ga 2 O 3 on 4H-SiC by liquid-injection MOCVD for improved thermal management of Ga 2 O 3 power devicescitations
- 2019Thick, Adherent Diamond Films on AlN with Low Thermal Barrier Resistance.
- 2019Thick adherent diamond films on AlN with low thermal barrier resistancecitations
- 2019Thick, adherent diamond films on AlN with low thermal barrier resistancecitations
- 2018Above bandgap thermoreflectance for non-invasive thermal characterization of GaN-based waferscitations
- 2015Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interfacecitations
- 2013Influence of microstructural defects on the thermal conductivity of GaN:A molecular dynamics studycitations
- 2009Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layerscitations
- 2007Integrated Raman - IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices
Places of action
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document
Integrated Raman - IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices
Abstract
We report on the development of a novel thermography technique, integrated Raman - IR thermography, illustrated here on AlGaN/GaN electronic devices. As it is a generic technique future application to Si, GaAs and other devices is anticipated. While IR thermography can provide fast temperature overviews, its current use for many of today's technologies is complicated by the fact that it does not provide the spatial resolution needed to probe sub-micron/micron size active device areas Integrating IR with micro-Raman thermography, providing temperature information with similar to 0.5 mu m spatial resolution, enables unique thermal analysis of semiconductor devices to a level not possible before. This opens new opportunities for device performance and reliability optimization, and failure analysis of modern semiconductor technology, in research, development, and quality control / manufacturing environments.