| People | Locations | Statistics |
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| Naji, M. |
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| Motta, Antonella |
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| Aletan, Dirar |
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| Mohamed, Tarek |
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| Ertürk, Emre |
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| Taccardi, Nicola |
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| Kononenko, Denys |
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| Petrov, R. H. | Madrid |
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| Alshaaer, Mazen | Brussels |
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| Bih, L. |
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| Casati, R. |
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| Muller, Hermance |
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| Kočí, Jan | Prague |
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| Šuljagić, Marija |
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| Kalteremidou, Kalliopi-Artemi | Brussels |
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| Azam, Siraj |
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| Ospanova, Alyiya |
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| Blanpain, Bart |
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| Ali, M. A. |
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| Popa, V. |
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| Rančić, M. |
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| Ollier, Nadège |
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| Azevedo, Nuno Monteiro |
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| Landes, Michael |
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| Rignanese, Gian-Marco |
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Kuball, Martin H. H.
in Cooperation with on an Cooperation-Score of 37%
Topics
Publications (12/12 displayed)
- 2022Self-assembled microstructures with localized graphene domains in an epoxy blend and their related propertiescitations
- 2021Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheets.citations
- 2021Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheetscitations
- 2020Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlNcitations
- 2019Understanding of Leading-Edge Protection Performance Using Nano-Silicates for Modificationcitations
- 2018Determination of the self-compensation ratio of carbon in AlGaN for HEMTscitations
- 2017Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETscitations
- 2015Low thermal resistance of a GaN-on-SiC transistor structure with improved structural properties at the interfacecitations
- 2015Enhancement-mode metal–insulator–semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0 V and blocking voltage above 1000 Vcitations
- 2014Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistorscitations
- 2009Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layerscitations
- 2007Integrated Raman - IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices
Places of action
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document
Integrated Raman - IR Thermography for Reliability and Performance Optimization, and Failure Analysis of Electronic Devices
Abstract
We report on the development of a novel thermography technique, integrated Raman - IR thermography, illustrated here on AlGaN/GaN electronic devices. As it is a generic technique future application to Si, GaAs and other devices is anticipated. While IR thermography can provide fast temperature overviews, its current use for many of today's technologies is complicated by the fact that it does not provide the spatial resolution needed to probe sub-micron/micron size active device areas Integrating IR with micro-Raman thermography, providing temperature information with similar to 0.5 mu m spatial resolution, enables unique thermal analysis of semiconductor devices to a level not possible before. This opens new opportunities for device performance and reliability optimization, and failure analysis of modern semiconductor technology, in research, development, and quality control / manufacturing environments.